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Presentation 2024-01-25 13:10
[Poster Presentation] Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation]
Yoshiya Abe, Kenta Yachida, Kazuki Sawai (Ryukoku Univ.), Tokiyoshi Matsuda (Kindai Univ.), Hidenori Kawanishi, Mutsumi Kimura (Ryukoku Univ.) EID2023-3
Abstract (in Japanese) (See Japanese page) 
(in English) ReRAMs have attracted much attention due to their high integration, stability, high-speed operation, and low cost. Therefore, the purpose of this study is to fabricate and evaluate ReRAM using Ga-Sn-O(GTO), an amorphous oxide semiconductor (AOS), to demonstrate its potential for new applications that are low-cost and can be mass-produced. In this study, we fabricated the ReRAM with three-layer of GTO stacked with different resistance values and evaluated their electrical characteristics. The ReRAM exhibited resistance change behavior including negative resistance that was different from unipolar and bipolar systems. In addition, analog-like characteristics were obtained and the switching ratio was improved, indicating the potential for neuromorphic applications.
Keyword (in Japanese) (See Japanese page) 
(in English) ReRAM / GTO / Amorphous oxide semiconductor (AOS) / / / / /  
Reference Info. IEICE Tech. Rep., vol. 123, no. 360, EID2023-3, pp. 5-8, Jan. 2024.
Paper # EID2023-3 
Date of Issue 2024-01-18 (EID) 
ISSN Online edition: ISSN 2432-6380
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Conference Information
Committee EID ITE-IDY IEE-EDD SID-JC IEIJ-SSL  
Conference Date 2024-01-25 - 2024-01-26 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To EID 
Conference Code 2024-01-EID-IDY-EDD-JC-SSL 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Resistance change behavior using negative resistance in ReRAM with three-layer GTO [Poster Presentation] 
Sub Title (in English)  
Keyword(1) ReRAM  
Keyword(2) GTO  
Keyword(3) Amorphous oxide semiconductor (AOS)  
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1st Author's Name Yoshiya Abe  
1st Author's Affiliation Ryukoku University (Ryukoku Univ.)
2nd Author's Name Kenta Yachida  
2nd Author's Affiliation Ryukoku University (Ryukoku Univ.)
3rd Author's Name Kazuki Sawai  
3rd Author's Affiliation Ryukoku University (Ryukoku Univ.)
4th Author's Name Tokiyoshi Matsuda  
4th Author's Affiliation Kindai University (Kindai Univ.)
5th Author's Name Hidenori Kawanishi  
5th Author's Affiliation Ryukoku University (Ryukoku Univ.)
6th Author's Name Mutsumi Kimura  
6th Author's Affiliation Ryukoku University (Ryukoku Univ.)
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Speaker Author-1 
Date Time 2024-01-25 13:10:00 
Presentation Time 5 minutes 
Registration for EID 
Paper # EID2023-3 
Volume (vol) vol.123 
Number (no) no.360 
Page pp.5-8 
#Pages 4 
Date of Issue 2024-01-18 (EID) 

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