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Paper Abstract and Keywords
Presentation 2024-08-02 11:35
SMR Type BAW Resonator using Epitaxial PbTiO3 Thin Film
Wataru Shimoyama, Yohkoh Shimano, Takahiko Yanagitani (Waseda Univ.) US2024-32
Abstract (in Japanese) (See Japanese page) 
(in English) Among BAW filters, SMR type resonators are fixed to the substrate via a Bragg reflector, which has the advantage of good heat dissipation and high power resistance. However, in order to fabricate SMR with epitaxial piezoelectric layer, usual bottom up process is difficult to be employed due to the amorphous SiO2 in a low acoustic impedance layer of the Bragg reflector. In addition to the heteroepitaxial growth method, wafer bonding technique has been attracting attention as a method to meet the growing demand for devices integrating different materials in recent years. Wafer bonding technique is not affected by differences in lattice constants and thermal expansion coefficients as in heteroepitaxy, and enables devices to be fabricated on heterogeneous substrates, which are difficult to grow epitaxially. In this study, we report SMR type resonators fabricated by transferring epitaxial PbTiO3 thin films with high piezoelectricity onto Bragg reflectors using surface activated bonding of Au thin films and substrate etching. The PbTiO3 thin film was evaluated by the polar X-ray diffraction, and the rocking curve FWHM was 0.90°, 4th fold symmetry indicating epitaxial growth was observed in the (101) pole figure. The impedance characteristics of the SMR resonator were evaluated, and resonance characteristics were observed in the 1.5 GHz band. From the resonance peak, the electromechanical coupling coefficient was evaluated using the resonance-antiresonance method, keff2 = 32.7%, which is higher than the value of kt2 (= 24.3%) estimated by the conversion loss method for a thin film resonator with a substrate.
Keyword (in Japanese) (See Japanese page) 
(in English) Piezoelectric Thin Films / Bragg Reflector / Resonator / Lead Titanate / Epitaxial films / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 141, US2024-32, pp. 75-80, Aug. 2024.
Paper # US2024-32 
Date of Issue 2024-07-25 (US) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF US2024-32

Conference Information
Committee US  
Conference Date 2024-08-01 - 2024-08-02 
Place (in Japanese) (See Japanese page) 
Place (in English) Matsue Terrsa 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material characterization, Ultrasonics, etc. 
Paper Information
Registration To US 
Conference Code 2024-08-US 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) SMR Type BAW Resonator using Epitaxial PbTiO3 Thin Film 
Sub Title (in English)  
Keyword(1) Piezoelectric Thin Films  
Keyword(2) Bragg Reflector  
Keyword(3) Resonator  
Keyword(4) Lead Titanate  
Keyword(5) Epitaxial films  
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Keyword(7)  
Keyword(8)  
1st Author's Name Wataru Shimoyama  
1st Author's Affiliation Waseda University (Waseda Univ.)
2nd Author's Name Yohkoh Shimano  
2nd Author's Affiliation Waseda University (Waseda Univ.)
3rd Author's Name Takahiko Yanagitani  
3rd Author's Affiliation Waseda University (Waseda Univ.)
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Speaker Author-1 
Date Time 2024-08-02 11:35:00 
Presentation Time 25 minutes 
Registration for US 
Paper # US2024-32 
Volume (vol) vol.124 
Number (no) no.141 
Page pp.75-80 
#Pages 6 
Date of Issue 2024-07-25 (US) 

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