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Paper Abstract and Keywords
Presentation 2024-10-24 14:30
Investigation of Ferroelectric HfNx Formation on Si(100) Substrates by Two-Step Deposition Method
Kaimu Hamada, Kangbai Li, Shun-ichiro Ohmi (Tokyo Tech) SDM2024-48
Abstract (in Japanese) (See Japanese page) 
(in English) In this work, we investigated the ferroelectric HfN film formation on Si substrates with nitrogen concentration utilizing ECR plasma sputtering to realize metal-ferroelectric-semiconductor field-effect-transistors (MFSFETs) with ferroelectric HfN thin films. To suppress the crystallinity variation of the HfN$_{1.15}$ layer close to the Si substrate, the two-step deposition method, investigated initial HfN$_x$ layer of 3 nm with Ar/N$_2$ flow rate of 14/17.5 or 14/21 sccm was deposited, followed by the deposition of a ferroelectric HfN$_{1.15}$. The lattice angle in the rhombohedral phase decreased from 88.93$degree$ to 88.73$degree$, indicating increased strain. The equivalent oxide thickness (EOT) was decreased to 1.96 nm for the N$_2$ flow ratio of 55.6%. Switching polarization ($P_{text{sw}}$) of 4.30 $mu$C/cm$^2$ was obtained for the PUND characteristics with $pm$3 V/ 5 $mu$s pulse, showing polarization characteristics with the two-step deposition method.
Keyword (in Japanese) (See Japanese page) 
(in English) Hafnium nitride / MFSFETs / Two-step deposition method / Ferroelectrics / ECR plasma sputtering / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 222, SDM2024-48, pp. 22-25, Oct. 2024.
Paper # SDM2024-48 
Date of Issue 2024-10-17 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2024-48

Conference Information
Committee SDM  
Conference Date 2024-10-24 - 2024-10-24 
Place (in Japanese) (See Japanese page) 
Place (in English) NICHe, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2024-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Investigation of Ferroelectric HfNx Formation on Si(100) Substrates by Two-Step Deposition Method 
Sub Title (in English)  
Keyword(1) Hafnium nitride  
Keyword(2) MFSFETs  
Keyword(3) Two-step deposition method  
Keyword(4) Ferroelectrics  
Keyword(5) ECR plasma sputtering  
Keyword(6)  
Keyword(7)  
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1st Author's Name Kaimu Hamada  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Kangbai Li  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Shun-ichiro Ohmi  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Speaker Author-1 
Date Time 2024-10-24 14:30:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2024-48 
Volume (vol) vol.124 
Number (no) no.222 
Page pp.22-25 
#Pages 4 
Date of Issue 2024-10-17 (SDM) 

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