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Paper Abstract and Keywords
Presentation 2025-01-23 17:05
[Special Talk] Quasi-Physical Large-Signal Model with RF Substrate Leakage Current for GaN-HEMT on Si
Yutaro Yamaguchi (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.) ED2024-75 MW2024-161
Abstract (in Japanese) (See Japanese page) 
(in English) This paper reports a quasi-physical large-signal model that considers RF leakage current in the substrate for GaN-HEMTs on a Si substrate. The proposed model incorporates the effects of electrons in the inversion layer at the buffer layer-Si substrate interface and holes generated by acceptors diffused from the buffer layer. To account for RF performance degradation caused by RF leakage current in the Si substrate due to these electrons and holes, a C-R-C circuit is inserted between the drain and source in the large-signal equivalent circuit model. Additionally, to physically consider the temperature dependence of the leakage current, the resistance and capacitance of the C-R-C circuit are derived from physical equations for electron and hole concentrations in the Si substrate. The model accurately reproduces measured temperature and drain electrode width dependencies of large-signal characteristics, confirming the validity of the proposed model.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / HEMT / Large-signal model / Si / / / /  
Reference Info. IEICE Tech. Rep., vol. 124, no. 356, MW2024-161, pp. 46-51, Jan. 2025.
Paper # MW2024-161 
Date of Issue 2025-01-16 (ED, MW) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2024-75 MW2024-161

Conference Information
Committee MW ED  
Conference Date 2025-01-23 - 2025-01-24 
Place (in Japanese) (See Japanese page) 
Place (in English) fukaya-kouminkan 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To MW 
Conference Code 2025-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Quasi-Physical Large-Signal Model with RF Substrate Leakage Current for GaN-HEMT on Si 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) HEMT  
Keyword(3) Large-signal model  
Keyword(4) Si  
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1st Author's Name Yutaro Yamaguchi  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
2nd Author's Name Toshiyuki Oishi  
2nd Author's Affiliation Saga University (Saga Univ.)
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Speaker Author-1 
Date Time 2025-01-23 17:05:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # ED2024-75, MW2024-161 
Volume (vol) vol.124 
Number (no) no.355(ED), no.356(MW) 
Page pp.46-51 
#Pages 6 
Date of Issue 2025-01-16 (ED, MW) 

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