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| Presentation | 2025-01-29 13:35 [Invited Talk] Vertical-channel Crystalline In2O3 FET with a Pulled-up Gate, Monolithically Stacked on Si CMOS, Achieving 112.2 μA/μm On-state Current Shoki Miyata, Kazuma Furutani, Yusuke Komura, Yoshinori Ando, Satoru Saito, Takeya Hirose, Fumito Isake, Hidekazu Miyairi, Hiroki Komagata, Haruki Katagiri, Takanori Matsuzaki, Tatsuya Onuki, Shunpei Yamazaki (SEL)  SDM2024-66 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We propose a 1T1C DRAM as a memory for artificial intelligence, formed with a vertical capacitor (VC) and a vertical-channel field effect transistor (VFET) that can be monolithically stacked on Si CMOS. The VFET improved its transient characteristics by adopting a gate with a pulled-up structure that reduces gate resistance and capacitance. Furthermore, VFET achieved high on-state current by using a crystalline indium oxide as a channel material. The VFET reduces its capacitance by 63.2% and a sheet resistance of a gate wiring by 95.1% as compared with a conventional structure, and improves its on-state current 8.3 times as that of the conventional structure. The 1T1C DRAM including VC and VFET monolithically stacked on Si CMOS takes 5 ns for reading and 5.5 ns for writing, and retains data for longer than 100 sec at 125℃, which achieves high-speed access and long-term retention. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Oxide Semiconductor / Memory / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 124, no. 367, SDM2024-66, pp. 3-6, Jan. 2025. | |
| Paper # | SDM2024-66 | |
| Date of Issue | 2025-01-22 (SDM) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2024-66 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2025-01-29 - 2025-01-29 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | KIT Toranomon Graduate School |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Advanced semiconductor devices and processes (Special feature on IEDM) |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2025-01-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Vertical-channel Crystalline In2O3 FET with a Pulled-up Gate, Monolithically Stacked on Si CMOS, Achieving 112.2 μA/μm On-state Current |
| Sub Title (in English) | |
| Keyword(1) | Oxide Semiconductor |
| Keyword(2) | Memory |
| Keyword(3) | |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shoki Miyata |
| 1st Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 2nd Author's Name | Kazuma Furutani |
| 2nd Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 3rd Author's Name | Yusuke Komura |
| 3rd Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 4th Author's Name | Yoshinori Ando |
| 4th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 5th Author's Name | Satoru Saito |
| 5th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 6th Author's Name | Takeya Hirose |
| 6th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 7th Author's Name | Fumito Isake |
| 7th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 8th Author's Name | Hidekazu Miyairi |
| 8th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 9th Author's Name | Hiroki Komagata |
| 9th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 10th Author's Name | Haruki Katagiri |
| 10th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 11th Author's Name | Takanori Matsuzaki |
| 11th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 12th Author's Name | Tatsuya Onuki |
| 12th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| 13th Author's Name | Shunpei Yamazaki |
| 13th Author's Affiliation | Semiconductor Energy Laboratory Co., Ltd., (SEL) |
| Speaker | Author-1 |
| Date Time | 2025-01-29 13:35:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2024-66 |
| Volume (vol) | vol.124 |
| Number (no) | no.367 |
| Page | pp.3-6 |
| #Pages | 4 |
| Date of Issue | 2025-01-22 (SDM) |
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