Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2025-10-31 14:20
Hydrogen Plasma-Induced Ultra-Low Carrier Density in Polycrystalline p/n-Ge Thin Films
Koki Nozawa, Takashi Suemasu, Kaoru Toko (Univ. of Tsukuba) SDM2025-51
Abstract (in Japanese) (See Japanese page) 
(in English) Polycrystalline Ge thin films are promising candidates for next-generation thin-film transistors. However, Ge thin films inherently possess a high density of defect-induced acceptors (hole concentration > 1017 cm−3), making Fermi-level control one of the major challenges in device applications. In this study, we attempted to synthesize low-defect polycrystalline Ge thin films by applying hydrogen passivation to solid-phase–grown Ge. Notably, by introducing hydrogen under optimized conditions, we successfully fabricated both p-type and n-type Ge thin films exhibiting properties that surpass those of conventionally reported Ge films.
Keyword (in Japanese) (See Japanese page) 
(in English) Germanium / Hydrogen passivation / Thin film transistor / CMOS / / / /  
Reference Info. IEICE Tech. Rep., vol. 125, no. 220, SDM2025-51, pp. 18-20, Oct. 2025.
Paper # SDM2025-51 
Date of Issue 2025-10-24 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2025-51

Conference Information
Committee SDM  
Conference Date 2025-10-31 - 2025-10-31 
Place (in Japanese) (See Japanese page) 
Place (in English) NICHe, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2025-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Hydrogen Plasma-Induced Ultra-Low Carrier Density in Polycrystalline p/n-Ge Thin Films 
Sub Title (in English)  
Keyword(1) Germanium  
Keyword(2) Hydrogen passivation  
Keyword(3) Thin film transistor  
Keyword(4) CMOS  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Koki Nozawa  
1st Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
2nd Author's Name Takashi Suemasu  
2nd Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
3rd Author's Name Kaoru Toko  
3rd Author's Affiliation University of Tsukuba (Univ. of Tsukuba)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2025-10-31 14:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2025-51 
Volume (vol) vol.125 
Number (no) no.220 
Page pp.18-20 
#Pages 3 
Date of Issue 2025-10-24 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan