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| Presentation | 2025-11-20 10:30 Temperature Characterization of Vertical GaN Devices on Silicon Substrates Ryoya Aono, Shoma Nakashima, Tatsuya Kondo, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.)  ED2025-23 CPM2025-51 LQE2025-47 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have been developing AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs), a type of vertical GaN-based transistor, using a high-resistivity strained layer superlattice (SLS) as the current blocking layer (CBL) instead of p-GaN to overcome the issues associated with p-GaN. The use of SLS enables an improvement in the maximum drain current density (IDSmax) and a reduction in drain leakage current compared with devices employing p-GaN. To further reduce the current barrier in the conductive SLS buffer layer on a Si substrate, Si $delta$-doping was introduced into the AlN layers within the SLS. It was found that $delta$-doping at the lower or both upper and lower regions of the AlN layer reduced the resistance, whereas $delta$-doping only at the upper region resulted in increased resistance. In this study, we investigated the effect of $delta$-doping position on the vertical conductivity of the SLS layer by evaluating the electrical characteristics over a temperature range from room temperature to 150 °C. Furthermore, to further suppress the current barrier, the $delta$-doped layer at the upper AlN region was shifted toward the GaN side, where Si is more easily ionized, and Schottky diodes were fabricated for electrical characterization. As a result, the forward current of the sample with the $delta$-doped layer shifted toward the GaN side increased by approximately three times compared with the conventional structure. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / CAVET / SLS / regrowth / δ-doping / vertical device / Schottky diode / | |
| Reference Info. | IEICE Tech. Rep., vol. 125, no. 257, ED2025-23, pp. 1-4, Nov. 2025. | |
| Paper # | ED2025-23 | |
| Date of Issue | 2025-11-13 (ED, CPM, LQE) | |
| ISSN | Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2025-23 CPM2025-51 LQE2025-47 |
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| Conference Information | |
| Committee | CPM ED LQE |
| Conference Date | 2025-11-20 - 2025-11-21 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | TENMONKAN VISION HALL |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2025-11-CPM-ED-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Temperature Characterization of Vertical GaN Devices on Silicon Substrates |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | CAVET |
| Keyword(3) | SLS |
| Keyword(4) | regrowth |
| Keyword(5) | δ-doping |
| Keyword(6) | vertical device |
| Keyword(7) | Schottky diode |
| Keyword(8) | |
| 1st Author's Name | Ryoya Aono |
| 1st Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 2nd Author's Name | Shoma Nakashima |
| 2nd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 3rd Author's Name | Tatsuya Kondo |
| 3rd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 4th Author's Name | Toshiharu Kubo |
| 4th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 5th Author's Name | Takashi Egawa |
| 5th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| Speaker | Author-1 |
| Date Time | 2025-11-20 10:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2025-23, CPM2025-51, LQE2025-47 |
| Volume (vol) | vol.125 |
| Number (no) | no.257(ED), no.258(CPM), no.259(LQE) |
| Page | pp.1-4 |
| #Pages | 4 |
| Date of Issue | 2025-11-13 (ED, CPM, LQE) |
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