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Paper Abstract and Keywords
Presentation 2026-03-13 11:45
[Invited Talk] CMP and activation-free direct bonding using ALD-Al2O3
Hayato Kitagawa, Taisuke Yamamoto, Fumihiro Inoue (Yokohama National Univ.) SDM2025-73
Abstract (in Japanese) (See Japanese page) 
(in English) In next-generation three-dimensional integration technologies, such as Backside Power Delivery Network (BSPDN) and reconstructed Die-to-Wafer (D2W) integration, a carrier wafer bonding process with high thermal dissipation and excellent uniformity is indispensable. Conventional direct bonding processes generally require chemical mechanical polishing (CMP) and plasma activation, which increase process cost and introduce wafer-level non-uniformity. In this invited talk, we propose a novel direct bonding process using an atomic layer deposited (ALD) Al2O3 thin film that does not require CMP or plasma activation. The ALD-Al2O3 film achieves void-free bonding with high bonding strength at the 300 mm wafer scale, even under low-temperature and ultrathin-film conditions, demonstrating superior bonding and thermal characteristics compared with conventional bonding materials. Furthermore, interfacial analyses are discussed to clarify the self-activated bonding mechanism originating from Al–OH species, as well as the role of interfacial water content in bonding formation.
Keyword (in Japanese) (See Japanese page) 
(in English) 3D integration / Carrier wafer / BSPDN / Reconstructed D2W Hybrid bonding / ALD-Al2O3 / / /  
Reference Info. IEICE Tech. Rep., vol. 125, no. 399, SDM2025-73, pp. 4-7, March 2026.
Paper # SDM2025-73 
Date of Issue 2026-03-06 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2025-73

Conference Information
Committee SDM  
Conference Date 2026-03-13 - 2026-03-13 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2026-03-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) CMP and activation-free direct bonding using ALD-Al2O3 
Sub Title (in English) * 
Keyword(1) 3D integration  
Keyword(2) Carrier wafer  
Keyword(3) BSPDN  
Keyword(4) Reconstructed D2W Hybrid bonding  
Keyword(5) ALD-Al2O3  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hayato Kitagawa  
1st Author's Affiliation Yokohama National University (Yokohama National Univ.)
2nd Author's Name Taisuke Yamamoto  
2nd Author's Affiliation Yokohama National University (Yokohama National Univ.)
3rd Author's Name Fumihiro Inoue  
3rd Author's Affiliation Yokohama National University (Yokohama National Univ.)
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Speaker Author-1 
Date Time 2026-03-13 11:45:00 
Presentation Time 40 minutes 
Registration for SDM 
Paper # SDM2025-73 
Volume (vol) vol.125 
Number (no) no.399 
Page pp.4-7 
#Pages 4 
Date of Issue 2026-03-06 (SDM) 

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