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Paper Abstract and Keywords
Presentation 2026-05-22 16:10
Electrical transport and contact characteristics of Co0.8Fe0.2/In1-xGaxAs ferromagnet-semiconductor structures for spintronic device applications
Md Foyshal, Yufeng Lu, Md Faysal Kabir, Jannatul Feddousy, Masashi Akabori (JAIST) ED2026-8 CPM2026-8 SDM2026-14
Abstract (in Japanese) (See Japanese page) 
(in English) Ferromagnetic/semiconductor (FM/SC) hybrid structures are essential in semiconductor spintronics, as they provide the foundation for developing spintronic devices. In₁₋ₓGaₓAs (0≤x≤1) is a promising semiconductor material for spintronic applications due to its high electron mobility and strong spin–orbit coupling, while Co₀.₈Fe₀.₂ is a promising ferromagnetic material because of its higher spin polarization. In₁₋ₓGaₓAs/GaAs(001) layers were grown by molecular beam epitaxy (MBE). The composition was confirmed by X-ray diffraction. Hall-effect measurements using van der Pauw samples showed that the electron mobility of In₁₋ₓGaₓAs decreased from 7.7 × 10³ to 3.6 × 10² cm²/V·s as the Ga composition increased. Transmission line model (TLM) devices were fabricated by photolithography on In₁₋ₓGaₓAs to evaluate the Co₀.₈Fe₀.₂/In₁₋ₓGaₓAs contact properties. Subsequently, Co0.8Fe0.2 electrodes were deposited by electron cyclotron resonance (ECR) sputtering. The sheet resistances from TLM are 4.7×10² Ω/sq, 1.5×10³ Ω/sq, and 2.2×10⁴ Ω/sq for x = 0, 0.2, and 0.4, respectively. The specific contact resistivity is almost independent of x and is in the range of (2.1-2.4)×10⁻⁴ Ω cm². The transfer length ranges from 1.0 to 7.0 µm, providing a guideline for contact design in future spintronic devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Semiconductor / Spintronics / Mobility / Photolithography / Resistivity / / /  
Reference Info. IEICE Tech. Rep., vol. 126, no. 35, ED2026-8, pp. 29-32, May 2026.
Paper # ED2026-8 
Date of Issue 2026-05-15 (ED, CPM, SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2026-8 CPM2026-8 SDM2026-14

Conference Information
Committee CPM ED SDM  
Conference Date 2026-05-22 - 2026-05-22 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2026-05-CPM-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical transport and contact characteristics of Co0.8Fe0.2/In1-xGaxAs ferromagnet-semiconductor structures for spintronic device applications 
Sub Title (in English)  
Keyword(1) Semiconductor  
Keyword(2) Spintronics  
Keyword(3) Mobility  
Keyword(4) Photolithography  
Keyword(5) Resistivity  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Md Foyshal  
1st Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
2nd Author's Name Yufeng Lu  
2nd Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
3rd Author's Name Md Faysal Kabir  
3rd Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
4th Author's Name Jannatul Feddousy  
4th Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
5th Author's Name Masashi Akabori  
5th Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
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Speaker Author-1 
Date Time 2026-05-22 16:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2026-8, CPM2026-8, SDM2026-14 
Volume (vol) vol.126 
Number (no) no.35(ED), no.36(CPM), no.37(SDM) 
Page pp.29-32 
#Pages 4 
Date of Issue 2026-05-15 (ED, CPM, SDM) 

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