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Paper Abstract and Keywords
Presentation
DC I-V characteristics of cryogenically-cooled GaN HEMT amplifier employing blue-light illumination
Yasunori Suzuki, Shoichi Narahashi (DOCOMO), Toshio Nojima (Hokudai)
Abstract (in Japanese) (See Japanese page) 
(in English) This paper experimentally investigates a 2-GHz band cryogenically-cooled gallium nitride high electron mobility transistor (GaN HEMT) amplifier that improves the stability and current collapse of the drain current by employing blue-light illumination. As an initial investigation, this paper shows the DC current-voltage (I-V) characteristics at 60 K. The results reported herein are the first on the DC I-V characteristics of the above mentioned 2-GHz band cryogenically-cooled GaN HEMT amplifier.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN HEMT / cryogenic electronics / amplifier / receiver front end / LED / / /  
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Conference Information
Committee MW  
Conference Date 2009-08-20 - 2009-08-21 
Place (in Japanese) (See Japanese page) 
Place (in English) KMUTNB, Bangkok, Thailand 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave and Millimeter-wave Technologies 
Paper Information
Registration To MW 
Conference Code 2009-08-MW 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) DC I-V characteristics of cryogenically-cooled GaN HEMT amplifier employing blue-light illumination 
Sub Title (in English)  
Keyword(1) GaN HEMT  
Keyword(2) cryogenic electronics  
Keyword(3) amplifier  
Keyword(4) receiver front end  
Keyword(5) LED  
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1st Author's Name Yasunori Suzuki  
1st Author's Affiliation NTT DOCOMO, INC. (DOCOMO)
2nd Author's Name Shoichi Narahashi  
2nd Author's Affiliation NTT DOCOMO, INC. (DOCOMO)
3rd Author's Name Toshio Nojima  
3rd Author's Affiliation Hokkaido University (Hokudai)
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