Ferroelectric-gate field-effect transistors (FeFETs) and their circuit applications are described. The FeFETs with Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si possess excellent data retention characteristics. They also operate stably at elevated temperature and have small transistor threshold voltage (Vth) distribution. The Vth can be adjusted by controlling channel impurity density for both n-channel and p-channel FeFETs. These performances are now suitable to integrated circuits application with nonvolatile functions. Fundamental properties for the applications to ferroelectric-CMOS nonvolatile logic-circuits and to ferroelectric-NAND flash memories are demonstrated.
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Ferroelectric-gate field-effect transistors (FeFETs) and their circuit applications are described. The FeFETs with Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1-x/Si possess excellent data retention characteristics. They also operate stably at elevated temperature and have small transistor threshold voltage (Vth) distribution. The Vth can be adjusted by controlling channel impurity density for both n-channel and p-channel FeFETs. These performances are now suitable to integrated circuits application with nonvolatile functions. Fundamental properties for the applications to ferroelectric-CMOS nonvolatile logic-circuits and to ferroelectric-NAND flash memories are demonstrated.