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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Takao Waho
Vice Chair Masaaki Kuzuhara
Secretary Tsuyoshi Tanaka, Manabu Arai
Assistant Shin-ichiro Takatani

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Fumio Horiguchi
Vice Chair Tanemasa Asano
Secretary Morifumi Ohno, Mariko Takayanagi
Assistant Yuichi Matsui

Conference Date Thu, Jan 26, 2006 13:30 - 17:00
Fri, Jan 27, 2006 09:00 - 12:10
Topics
Conference Place  
Contact
Person
011-706-3211

Thu, Jan 26 PM 
13:30 - 15:10
(1) 13:30-13:55 - Yasuhiko Ishikawa, Tochihiro Yamamoto, Michiharu Tabe (Shizuoka Univ.)
(2) 13:55-14:20 Periodic Coulomb oscillation in Si single-eletron transistor based on multiple islands Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.)
(3) 14:20-14:45 - Takuya Kaizawa, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)
(4) 14:45-15:10 Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.)
  15:10-15:30 Break ( 20 min. )
Thu, Jan 26 PM 
15:30 - 17:00
(5) 15:30-16:10 [Invited Talk]
Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature
-- Fabrication using SOI and measurements of its characteristics --
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa (NTT), Yasuo Takahashi (Hokkaido Univ.)
(6) 16:10-16:35 Hybrid structures of CNT quantum dots and the GaAs/AlGaAs 2DEG Koji Ishibashi, , Satoshi Moriyama, Takeo Uchida, (RIKEN)
(7) 16:35-17:00 - Ratno Nuryadi, Yasuhiko Ishikawa, Michiharu Tabe (Shizuoka Univ.)
Fri, Jan 27 AM 
09:00 - 10:15
(8) 09:00-09:25 Smith-Purcell Radiation using Si field emitter
-- Proposal of light source using field emitter --
Yoichiro Neo (Shizuoka Univ.), Hidetaka Shimawaki (H.I.T Univ.), Hidenori Mimura (Shizuoka Univ.)
(9) 09:25-09:50 - Keisuke Jinen, Takeshi Kikuchi, Kaoru Uchida, Shinji Kodaira, Masahiro Watanabe, Masahiro Asada (Tokyo Institute of Technology)
(10) 09:50-10:15 - Toru Kanazawa, Atsushi Morosawa, Ryo Fujii, Takafumi Wada, Masahiro Watanabe, Masahiro Asada (Tokyo Institute of Technology Univ.)
  10:15-10:30 Break ( 15 min. )
Fri, Jan 27 AM 
10:30 - 12:10
(11) 10:30-10:55 Study on switching characteristics of quantum wire transistors and single electron transistors controlled by Schottky wrap gate for ultra-low power quantum nano integrated logic circuits Seiya Kasai, Miki Yumoto, Hideki Hasegawa (Hokkaido Univ.)
(12) 10:55-11:20 Investigation of GaAs-based single electron device for hexagnal BDD single electron logic curcuit Yuji Abe, Tatsuya Nakamura, Takahiro Tamura, Seiya Kasai, Tamotsu Hashizume, Hideki Hasegawa (Hokkaido Univ)
(13) 11:20-11:45 - Shinpei Nakagawa, Keisuke Eguchi, Takao Waho (Sophia Univ.)
(14) 11:45-12:10 A novel resonant tunneling delta-sigma AD converter suitable for high frequency operation Koichi Maezawa, Wataru Matsubara, Koki Furukawa, Takashi Mizutani (Nagoya Univ.)

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Tsuyoshi Tanaka(Matsushita)
TEL: 075-956-9083, FAX: 075-956-9110
E--mail: erlci
Manabu Arai(New JRC)
TEL: 049-278-1477、FAX: 049-278-1419
E--mail: injr
Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E--mail: injr 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E--mail:etn-u,acmsk 


Last modified: 2005-11-24 19:30:03


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