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| Chair |
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Shunichiro Ohmi (Tokyo Inst. of Tech.) |
| Vice Chair |
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Tatsuya Usami (ASM Japan) |
| Secretary |
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Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic) |
| Assistant |
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Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (SanDisk) |
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| Conference Date |
Mon, Jan 30, 2023 13:10 - 16:55 |
| Topics |
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| Conference Place |
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| Sponsors |
This conference is co-sponsored by The Japan Society of Applied Physics.
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Mon, Jan 30 PM
13:00 - 16:55 |
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13:00-13:10 |
Opening Address ( 10 min. ) |
| (1) |
13:10-13:40 |
[Invited Talk]
Integration Design of 3D Heterogeneous IGZO/Ge/2Si 6T SRAM for Extremely Reduced Cell Size  SDM2022-79 |
Chang Wenhsin, , , , , , (****) |
| (2) |
13:40-14:10 |
[Invited Talk]
A c-axis aligned crystalline IGZO FET and a 0.06-µm2 HfO2-based Capacitor 1T1C FeRAM with High Voltage Tolerance and 10-ns Write Time SDM2022-80 |
Kazuaki Ohshima, Masami Endo, Shiyuu Numata, Yuji Egi, Fumito Isaka, Toshikazu Ohno, Sachiaki Tezuka, Toshiki Hamada, Kazuma Furutani, Kazuki Tsuda, Takanori Matsuzaki, Tatsuya Onuki, Tsutomu Murakawa, Hitoshi Kunitake (SEL), Masaharu Kobayashi (The Univ. of Tokyo), Shunpei Yamazaki (SEL) |
| (3) |
14:10-14:40 |
[Invited Talk]
25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance >107 for eFlash-type MRAM SDM2022-81 |
H Honjoi, K Nishioka, S Miura, Hiroshi Naganuma, T Watanabe, T Nasuno, T Tanigawa, Y Noguchi, H Inoue, M Yasuhiro, S Ikeda, T Endoh (Tohoku Univ.) |
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14:40-14:55 |
Break ( 15 min. ) |
| (4) |
14:55-15:25 |
[Invited Talk]
Design guidlines for SBD integration into SiC-MOSFET breaking RonA- diode conduction capability trade-off SDM2022-82 |
Shunsuke Asaba, Masaru Furukawa, Yuji Kusumoto (Toshiba D&S), Ryosuke Iijima (Toshiba), Hiroshi Kono (Toshiba D&S) |
| (5) |
15:25-15:55 |
[Invited Talk]
Non-volatile Mid-infrared Phase Change Material Optical Phase Shifter Based on Ge2Sb2Te3S2 SDM2022-83 |
Yuto Miyatake (Univ. of Tokyo), Kotaro Makino, Junji Tominaga, Noriyuki Miyata, Takashi Nakano, Makoto Okano (AIST), Kasidit Toprasertpong, Shinichi Takagi, Mitsuru Takenaka (Univ. of Tokyo) |
| (6) |
15:55-16:25 |
[Invited Talk]
Resonant Tunneling Diode Technology for Future Terahertz Applications SDM2022-84 |
Safumi Suzuki (Tokyo Insutitute of Tech.) |
| (7) |
16:25-16:55 |
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| Announcement for Speakers |
| Invited Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
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| Contact Address |
※各研究会幹事もしくは担当者の連絡先を記載してください。 |
Last modified: 2023-01-10 15:30:19
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