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| Chair |
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Shunichiro Ohmi (Tokyo Inst. of Tech.) |
| Vice Chair |
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Tatsuya Usami (Rapidus) |
| Secretary |
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Tomoyuki Suwa (Tohoku Univ.), Taiji Noda (Panasonic) |
| Assistant |
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Takuji Hosoi (Kwansei Gakuin Univ.), Takuya Futase (Western Digital) |
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| Conference Date |
Fri, Oct 13, 2023 13:00 - 17:20 |
| Topics |
Process Science and New Process Technology |
| Conference Place |
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Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Registration Fee |
This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM. |
Fri, Oct 13 PM
13:00 - 17:20 |
| (1) |
13:00-13:40 |
[Invited Talk]
Defect Reduction in UV Nanoimprint Lithography  SDM2023-54 |
Toshiki ITO (Canon) |
| (2) |
13:40-14:20 |
[Invited Talk (Young Researcher)]
Investigation on Thermoelectric Properties of Flexible Thermoelectric Power Generators from Conductive Fabrics SDM2023-55 |
Hudzaifah Al Hijri, Daiki Kansaku, Hiroya Ikeda (Shizuoka Univ.) |
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14:20-14:30 |
Break ( 10 min. ) |
| (3) |
14:30-15:10 |
[Invited Talk]
Determination of charge centroid location and energy depth of charge carriers trapped in silicon nitride charge-trap layers SDM2023-56 |
Kiyoteru Kobayashi (Tokai Univ.) |
| (4) |
15:10-15:50 |
[Invited Talk]
statistical analysis of random telegraphic noise dependence on operating condition using electrical characteristic measurement platform SDM2023-57 |
Takezo Mawaki, Rihito Kuroda (Tohoku Univ.) |
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15:50-16:00 |
Break ( 10 min. ) |
| (5) |
16:00-16:20 |
Excimer laser annealing method with the controlled grain size of poly-Si films and TFT characteristics SDM2023-58 |
Shu Nishida, Keita Katayama, Daisuke Nakamura (Kyushu Univ.), Tetsuya Goto (Tohoku Univ.), Hiroshi Ikenoue (Kochi Univ. of Technology) |
| (6) |
16:20-16:40 |
Formation and basic evaluation of gallium oxide thin film on sapphire substrate SDM2023-59 |
Fuminobu Imaizumi, Takumi Morita (NIT, Oyama college) |
| (7) |
16:40-17:00 |
Formation process of GaN MOS interface suppressing interfacial oxidation SDM2023-60 |
Tsurugi Kondo, Katsunori Ueno, Ryo Tanaka, Shinya Takashima, Masaharu Edo (Fuji Electric), Tomoyuki Suwa (NICHe, Tohoku Univ.) |
| (8) |
17:00-17:20 |
A study on the integration process of ReRAM and OFET utilizing Nitrogen doped LaB6/LaBxNy stacked structure SDM2023-61 |
Jiaang Zhao, Shun-ichiro Ohmi (Tokyo Tech) |
| Announcement for Speakers |
| General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
| Invited Talk | Each speech will have 30 minutes for presentation and 10 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
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| Contact Address |
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Last modified: 2023-08-28 17:21:23
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