Paper Abstract and Keywords |
Presentation |
2023-10-13 16:20
Formation and basic evaluation of gallium oxide thin film on sapphire substrate Fuminobu Imaizumi, Takumi Morita (NIT, Oyama college) SDM2023-59 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Recently, the development of wide bandgap semiconductor materials has become increasingly important. In particular, there has been much development of optical and power devices. Gallium oxide in many materials is a wide bandgap material (Eg = 4.4~5.3 eV) and is expected to be applied to power devices with high breakdown voltage and low loss energy. In this study, Gallium oxide thin films were formed by RF sputtering and their basic crystal structures were investigated by XRD.
Ga2O3 films were deposited on sapphire and LiNbO3 substrates, and the dependence of the orientation on annealing temperature was investigated. In addition, the cross-sectional structure was investigated and the uniformity of the thin films was evaluated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Gallium Oxide / Sapphire Substrate / / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 123, no. 211, SDM2023-59, pp. 34-39, Oct. 2023. |
Paper # |
SDM2023-59 |
Date of Issue |
2023-10-06 (SDM) |
ISSN |
Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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SDM2023-59 |
Conference Information |
Committee |
SDM |
Conference Date |
2023-10-13 - 2023-10-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2023-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Formation and basic evaluation of gallium oxide thin film on sapphire substrate |
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Gallium Oxide |
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Sapphire Substrate |
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1st Author's Name |
Fuminobu Imaizumi |
1st Author's Affiliation |
National Institute of Technology, Oyama College (NIT, Oyama college) |
2nd Author's Name |
Takumi Morita |
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National Institute of Technology, Oyama College (NIT, Oyama college) |
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Speaker |
Author-1 |
Date Time |
2023-10-13 16:20:00 |
Presentation Time |
20 minutes |
Registration for |
SDM |
Paper # |
SDM2023-59 |
Volume (vol) |
vol.123 |
Number (no) |
no.211 |
Page |
pp.34-39 |
#Pages |
6 |
Date of Issue |
2023-10-06 (SDM) |
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