|
|
| Chair |
|
Yasuo Nara |
| Vice Chair |
|
Yuzou Oono (Univ. of Tsukuba) |
| Secretary |
|
Yoshitaka Sasago (Hitachi) |
| Assistant |
|
Rihito Kuroda (Tohoku Univ.) |
|
| Conference Date |
Thu, Oct 17, 2013 14:00 - 19:00
Fri, Oct 18, 2013 09:30 - 14:30 |
| Topics |
Process Science and New Process Technology |
| Conference Place |
FFF, Niche, Tohoku University |
| Address |
FFF Neiche, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, 980-8579 |
Contact
Person |
Rihito Kuroda, Tohoku University
022-795-3977 |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Thu, Oct 17 PM
14:00 - 19:00 |
| (1) |
14:00-14:50 |
[Invited Talk]
Technological Trend of SiC Power Devices  SDM2013-88 |
Takashi Shinohe (TOSHIBA) |
| (2) |
14:50-15:20 |
Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110) SDM2013-89 |
Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
| |
15:20-15:40 |
Break ( 20 min. ) |
| (3) |
15:40-16:10 |
Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering SDM2013-90 |
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) |
| (4) |
16:10-16:40 |
A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface SDM2013-91 |
Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
| |
16:40-17:00 |
Break ( 20 min. ) |
| |
17:00-19:00 |
Banquet ( 120 min. ) |
Fri, Oct 18 AM
09:30 - 14:30 |
| (5) |
09:30-10:00 |
Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack SDM2013-92 |
Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.) |
| (6) |
10:00-10:30 |
A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications SDM2013-93 |
Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) |
| (7) |
10:30-11:00 |
Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface SDM2013-94 |
Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.) |
| (8) |
11:00-11:30 |
Classical molecular dynamics simulations of plasma-induced physical damage
-- defect generation mechanisms in fin-type MOSFET -- SDM2013-95 |
Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) |
| |
11:30-13:00 |
Lunch ( 90 min. ) |
| (9) |
13:00-13:30 |
Design method of stacked type non-volatile memory SDM2013-96 |
Shigeyoshi Watanabe (Shonan Inst. of Tech.) |
| (10) |
13:30-14:00 |
Effects of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs SDM2013-97 |
Masayuki Kamei, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.) |
| (11) |
14:00-14:30 |
Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region SDM2013-98 |
Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) |
| Announcement for Speakers |
| General Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
| Invited Talk | Each speech will have 40 minutes for presentation and 10 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4835
E- :     fff   e   |
Last modified: 2013-08-19 15:10:12
|