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Paper Abstract and Keywords
Presentation 2013-10-18 10:00
A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications
Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) SDM2013-93 Link to ES Tech. Rep. Archives: SDM2013-93
Abstract (in Japanese) (See Japanese page) 
(in English) It was reported that oxidation immunity of LaB6 was improved by nitrogen incorporation. Basic characteristics of nitrogen-doped LaB6 was investigated. First, wet etching process using nitric acid was investigated. Then, a 400 deg./5 min anneal in N2/4.9%H2 ambient effect was also investigated. And a crystalline orientation of LaB6 was observed. The etching condition using nitric acid was obtained. The resistivity of 290 micro-ohm-cm and its crystalline orientation of (110) were also obtained. C-V characteristics of LaB6/SiO2/Si(100) was found to be improved by 400 deg./5 min anneal in N2/4.9%H2 and the obtained work function was 3.3-4.6 eV.
Keyword (in Japanese) (See Japanese page) 
(in English) LaB6 / nitrogen-doped / low work function / etching / anneal / / /  
Reference Info. IEICE Tech. Rep., vol. 113, no. 247, SDM2013-93, pp. 27-31, Oct. 2013.
Paper # SDM2013-93 
Date of Issue 2013-10-10 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2013-10-17 - 2013-10-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2013-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications 
Sub Title (in English)  
Keyword(1) LaB6  
Keyword(2) nitrogen-doped  
Keyword(3) low work function  
Keyword(4) etching  
Keyword(5) anneal  
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1st Author's Name Yasutaka Maeda  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Shun-ichiro Ohmi  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
3rd Author's Name Tetsuya Goto  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Tadahiro Ohmi  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2013-10-18 10:00:00 
Presentation Time 30 minutes 
Registration for SDM 
Paper # SDM2013-93 
Volume (vol) vol.113 
Number (no) no.247 
Page pp.27-31 
#Pages
Date of Issue 2013-10-10 (SDM) 


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