Paper Abstract and Keywords |
Presentation |
2013-10-18 10:00
A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) SDM2013-93 Link to ES Tech. Rep. Archives: SDM2013-93 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
It was reported that oxidation immunity of LaB6 was improved by nitrogen incorporation. Basic characteristics of nitrogen-doped LaB6 was investigated. First, wet etching process using nitric acid was investigated. Then, a 400 deg./5 min anneal in N2/4.9%H2 ambient effect was also investigated. And a crystalline orientation of LaB6 was observed. The etching condition using nitric acid was obtained. The resistivity of 290 micro-ohm-cm and its crystalline orientation of (110) were also obtained. C-V characteristics of LaB6/SiO2/Si(100) was found to be improved by 400 deg./5 min anneal in N2/4.9%H2 and the obtained work function was 3.3-4.6 eV. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
LaB6 / nitrogen-doped / low work function / etching / anneal / / / |
Reference Info. |
IEICE Tech. Rep., vol. 113, no. 247, SDM2013-93, pp. 27-31, Oct. 2013. |
Paper # |
SDM2013-93 |
Date of Issue |
2013-10-10 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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SDM2013-93 Link to ES Tech. Rep. Archives: SDM2013-93 |
Conference Information |
Committee |
SDM |
Conference Date |
2013-10-17 - 2013-10-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Niche, Tohoku Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process Science and New Process Technology |
Paper Information |
Registration To |
SDM |
Conference Code |
2013-10-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications |
Sub Title (in English) |
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Keyword(1) |
LaB6 |
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nitrogen-doped |
Keyword(3) |
low work function |
Keyword(4) |
etching |
Keyword(5) |
anneal |
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1st Author's Name |
Yasutaka Maeda |
1st Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
2nd Author's Name |
Shun-ichiro Ohmi |
2nd Author's Affiliation |
Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
3rd Author's Name |
Tetsuya Goto |
3rd Author's Affiliation |
Tohoku University (Tohoku Univ.) |
4th Author's Name |
Tadahiro Ohmi |
4th Author's Affiliation |
Tohoku University (Tohoku Univ.) |
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Speaker |
Author-1 |
Date Time |
2013-10-18 10:00:00 |
Presentation Time |
30 minutes |
Registration for |
SDM |
Paper # |
SDM2013-93 |
Volume (vol) |
vol.113 |
Number (no) |
no.247 |
Page |
pp.27-31 |
#Pages |
5 |
Date of Issue |
2013-10-10 (SDM) |