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Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Hiroki Fujishiro (Tokyo Univ. of Science)
Vice Chair Seiya Sakai (Hokkaido Univ.)
Secretary Toshiyuki Oishi (Saga Univ.), Takuya Tsutsumi (NTT)
Assistant Masatoshi Koyama (Osaka Inst. of Tech.), Yoshitugu Yamamoto (Mitsubishi Electric)

Technical Committee on Microwaves (MW) [schedule] [select]
Chair Noriharu Suematsu (Tohoku Univ.)
Vice Chair Tadashi Kawai (Univ. of Hyogo), Kensuke Okubo (Okayama Prefectural Univ.), Hideyuki Nakamizo (Mitsubishi Electric)
Secretary Ryo Ishikawa (Univ. of Electro-Comm), Tamio Kawaguchi (Toshiba)
Assistant Naoki Hasegawa (Softbank), Kosuke Katayama (NIT Tokuyama College)

Conference Date Fri, Jan 27, 2023 09:35 - 16:55
Topics  
Conference Place Kikai-Shinko-Kaikan Bldg. 
Address 〒105-0011 3-5-8, Shibakoen, Minato-ku, Tokyo, Japan
Transportation Guide http://www.jspmi.or.jp/kaigishitsu/access.html
Contact
Person
Mr. Tamio Kawaguchi
+81-50-3190-9079
Sponsors This conference is technical co-sponsored by IEEE MTT-S Japan Chapter, IEEE MTT-S Kansai Chapter and IEEE MTT-S Nagoya Chapter.
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on MW, ED.

  09:30-09:35 ( 5 min. )
Fri, Jan 27 AM 
09:35 - 10:50
(1) 09:35-10:00 A Calibration method for RF Spectrum Regeneration Using Direct RF Undersampling at Different Sampling Frequency Multi-path ED2022-86 MW2022-145 Takashi Shiba, Tomoyuki Furuichi, Noriharu Suematsu (Tohoku Univ.)
(2) 10:00-10:25 Design of Parasitic-Element Loaded Wideband Filtering Antenna with Unidirectional Radiation Pattern over 30% Frequency Bandwidth ED2022-87 MW2022-146 Ken Sakiyama, Masataka Ohira, Zhewang Ma (Saitama Univ.)
(3) 10:25-10:50 A Reinforcement Learning Approach Enabling Automatic Microstrip BPF Design for Multiple Specifications ED2022-88 MW2022-147 Yuto Asai, Masataka Ohira, Zhewang Ma (Saitama Univ.)
  10:50-11:00 Break ( 10 min. )
Fri, Jan 27 AM 
11:00 - 11:50
(4) 11:00-11:25 Measurement Evaluation of Bias Dependence of Single-Input Broadband GaN Amplifier ED2022-89 MW2022-148 Yuki Nakagawa, Takana Kaho (Shonan Inst. Tech.), Shuichi Sakata, Yuji Komatsuzaki, Koji Yamanaka (MELCO)
(5) 11:25-11:50 Over 600W Ultra High Power X-Band IM-FET Utilized non-Uniform Comb Lines for Stabilization ED2022-90 MW2022-149 Eigo Kuwata, Takumi Sugitani, Takashi Yamasaki, Yoshitaka Kamo, Shintaro Shinjo (MELCO)
  11:50-12:50 Break ( 60 min. )
Fri, Jan 27 PM 
12:50 - 14:30
(6) 12:50-13:15 Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters
-- Device Simulation Study --
ED2022-91 MW2022-150
Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric)
(7) 13:15-13:40 ED2022-92 MW2022-151
(8) 13:40-14:05 Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT ED2022-93 MW2022-152 Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech)
(9) 14:05-14:30 Challenges and Potential of N-polar GaN HEMT for beyond 5G Wireless Network ED2022-94 MW2022-153 Shigeki Yoshida, Kozo Makiyama, Akihiro Hayasaka, Isao Makabe, Ken Nakata (SEI)
  14:30-14:45 Break ( 15 min. )
Fri, Jan 27 PM 
14:45 - 16:05
(10) 14:45-15:25 [Invited Talk]
Circuits and devices technology of GaN power amplifiers for microwave and millimeter-wave application ED2022-95 MW2022-154
Koji Matsunaga (SIT)
(11) 15:25-16:05 [Invited Talk]
Requierements for sharing type 4G/5G base station transciever amplifiers ED2022-96 MW2022-155
Koji Yamanaka, Yuji Komatsuzaki, Shuichi Sakata, Kento Saiki (Mitsubishi Electric), Takana Kaho (SIT)
  16:05-16:15 Break ( 10 min. )
Fri, Jan 27 PM 
16:15 - 16:55
(12) 16:15-16:55 [Invited Talk]
Microwave Semiconductor Devices and Circuits for Industrial Innovation ED2022-97 MW2022-156
Kazuhiko Honjo (UEC)
  16:55-17:00 ( 5 min. )

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 30 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address Toshiyuki Oishi (Saga Univ.)
TEL : 0952-28-8645
E- :oi104cc-u
Takuya Tsutsumi (NTT)
TEL: 046-240-3180
E-:  
MW Technical Committee on Microwaves (MW)   [Latest Schedule]
Contact Address Tamio Kawaguchi (Toshiba)
E-: oguba
or
Ryo Ishikawa (UEC)
E-: ric 


Last modified: 2023-01-16 14:57:22


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