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Paper Abstract and Keywords
Presentation 2023-01-27 12:50
Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters -- Device Simulation Study --
Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric) ED2022-91 MW2022-150
Abstract (in Japanese) (See Japanese page) 
(in English) GaN HEMTs are used in high frequency and power electronics applications. Advanced systems demand improvement of characteristics in Hz to MHz frequency region, where traps and heating effects affect. Low frequency Y parameter measurement is a method for not only trap behavior analysis but also trap circuit construction. In this study, we investigated effects of GaN traps to Y22 by device simulation. Imaginary parts of Y22 (Im(Y22)) were calculated for GaN HEMTs with very narrow trap region in GaN layer. When the narrow trap region was located at the AlGaN/GaN interface, there was no signal in Y22. Im(Y22) became maximum around 0.1 μm and less for deeper trap position. The amplitudes of Im(Y22) were found to correspond to integration of change of ionized trap density. In addition, Im(Y22) signal enhanced around knee voltage for GaN HEMTs with uniform trap distribution in GaN layer. The traps located between gate and drain respond for change of drain voltages.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN HEMT / Y parameters / trap characterization / device simulation / / / /  
Reference Info. IEICE Tech. Rep., vol. 122, no. 370, ED2022-91, pp. 29-32, Jan. 2023.
Paper # ED2022-91 
Date of Issue 2023-01-20 (ED, MW) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee MW ED  
Conference Date 2023-01-27 - 2023-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2023-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters 
Sub Title (in English) Device Simulation Study 
Keyword(1) GaN HEMT  
Keyword(2) Y parameters  
Keyword(3) trap characterization  
Keyword(4) device simulation  
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1st Author's Name Shogo Morokuma  
1st Author's Affiliation Saga University (Saga Univ.)
2nd Author's Name Tomohiro Otsuka  
2nd Author's Affiliation Mitsubishi Electric (Mitsubishi Electric)
3rd Author's Name Toshiyuki Oishi  
3rd Author's Affiliation Saga University (Saga Univ.)
4th Author's Name Yutaro Yamaguchi  
4th Author's Affiliation Mitsubishi Electric (Mitsubishi Electric)
5th Author's Name Shintaro Shinjo  
5th Author's Affiliation Mitsubishi Electric (Mitsubishi Electric)
6th Author's Name Koji Yamanaka  
6th Author's Affiliation Mitsubishi Electric (Mitsubishi Electric)
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Speaker Author-3 
Date Time 2023-01-27 12:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2022-91, MW2022-150 
Volume (vol) vol.122 
Number (no) no.370(ED), no.371(MW) 
Page pp.29-32 
#Pages 4 
Date of Issue 2023-01-20 (ED, MW) 

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