|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2007-06-08 10:30 |
Hiroshima |
Hiroshima Univ. ( Faculty Club) |
The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42 |
The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (... [more] |
SDM2007-42 pp.59-64 |
SDM |
2006-06-21 14:55 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Characterization of open volumes in high-k gate dielectrics by using monoenergetic positron beams Akira Uedono, T. Otsuka, K. Ito, K. Shiraishi, Kikuo Yamabe (Univ. of Tsukuba), Seiichi Miyazaki (Hiroshima Univ.), Naoto Umezawa, Toyohiro Chikyow (NIMS), Toshiyuki Ohdaira, R. Suzuki (AIST), Seiji Inumiya, Satoshi Kamiyama (Selete), Yasushi Akasaka (TEL), Yasuo Nara (Selete), Keisaku Yamada (Waseda Uni.) |
[more] |
SDM2006-46 pp.25-30 |
SDM |
2006-06-22 14:40 |
Hiroshima |
Faculty Club, Hiroshima Univ. |
Electric characteristics of HfSiON gate dielectric film(tentative) Ryu Hasunuma, Tatsuya Naito (Univ. of Tsukuba), Seiji Inumiya (Selete), Kikuo Yamabe (Univ. of Tsukuba) |
[more] |
SDM2006-62 pp.113-117 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|