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Abstract
Paper #
ICD
,
SDM
2006-08-18
09:50
Hokkaido
Hokkaido University
Parameter and Random Dopant Fluctuation on Fully-Depleted SOI MOSFETs with a Very Thin BOX
Tetsu Ohtou
(
Univ. Tokyo
),
Nobuyuki Sugii
(
R&D Group, Hitachi, Ltd.,
),
Toshiro Hiramoto
(
Univ. Tokyo
)
[more]
SDM2006-144
ICD2006-98
pp.111-114
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