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Technical Committee on Electron Devices (ED)  (Searched in: 2014)

Search Results: Keywords 'from:2014-11-27 to:2014-11-27'

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Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Ascending)
 Results 21 - 27 of 27 [Previous]  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2014-11-28
13:40
Osaka   Mapping of thermal degradation of Au/Ni/n-GaN Schottky diodes using scanning internal photoemission microscopy
Kenji Shiojima, Shingo Yamamoto, Yuhei Kihara (Univ. of Fukui) ED2014-91 CPM2014-148 LQE2014-119
We have developed a new mapping technique, scanning internal–photoemission microscopy, to characterize the electri... [more] ED2014-91 CPM2014-148 LQE2014-119
pp.85-90
LQE, ED, CPM 2014-11-28
14:05
Osaka   Surface charging effects in AlGaN/GaN HEMTs induced by off-stress bias
Kenya Nishiguchi, Tamotsu Hashizume (Hokkaido Univ.) ED2014-92 CPM2014-149 LQE2014-120
 [more] ED2014-92 CPM2014-149 LQE2014-120
pp.91-95
LQE, ED, CPM 2014-11-28
14:30
Osaka   MOCVD Gorwoth and characterization of nearly lattice-matched InAlN/AlGaN 2DEG heterostructures
Shu Fujita, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.) ED2014-93 CPM2014-150 LQE2014-121
InAlN/AlGaN two-dimensional-electron gas (2DEG) heterostructures are expected to be able to show extremely high breakdow... [more] ED2014-93 CPM2014-150 LQE2014-121
pp.97-102
LQE, ED, CPM 2014-11-28
15:10
Osaka   Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells
Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2014-94 CPM2014-151 LQE2014-122
We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-ci... [more] ED2014-94 CPM2014-151 LQE2014-122
pp.103-106
LQE, ED, CPM 2014-11-28
15:35
Osaka   Enhancement of photoluminescence intensity in Eu-doped GaN by microcavity
Tomohiro Inaba, Ryuta Wakamatsu, Dong-gun Lee, Takanori Kojima, Atsushi Koizumi, Yasufumi Fujiwara (Osaka Univ.) ED2014-95 CPM2014-152 LQE2014-123
Enhancement of Eu-related luminescence intensity in Eu,O-codoped GaN (GaN:Eu,O) was demonstrated by embedding a GaN:Eu,O... [more] ED2014-95 CPM2014-152 LQE2014-123
pp.107-110
LQE, ED, CPM 2014-11-28
16:00
Osaka   Effects of thermal cleaning on surface of bulk GaN substrates
Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] ED2014-96 CPM2014-153 LQE2014-124
pp.111-115
LQE, ED, CPM 2014-11-28
16:25
Osaka   Fabrication of single crystalline p-i-n nanocolumns array on a sputter-deposited thin film
Tomohiro Noma, Hiroaki Hayashi, Daishi Fukushima, Yuta Konno, Ichiro Nomura, Katsumi Kishino (Sophia Univ.) ED2014-97 CPM2014-154 LQE2014-125
Nitride has an attractive feature of bandgap engineering from ultraviolet to infrared. However, a lot of defects in nitr... [more] ED2014-97 CPM2014-154 LQE2014-125
pp.117-120
 Results 21 - 27 of 27 [Previous]  /   
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