| Paper Abstract and Keywords |
| Presentation |
2014-11-28 15:10
Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells Noriyuki Watanabe, Manabu Mitsuhara, Haruki Yokoyama (NTT), Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.) ED2014-94 CPM2014-151 LQE2014-122 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We have investigated InGaN/GaN multiple quantum well (MQW) solar cells in terms of the relationship between the short-circuit current and the MQW structure. We previously reported that the short-circuit current dependence on the number of well can be well explained by the hypothesis that the transport characteristics of photoinduced carriers are characterized by the “specific length” within which carriers photoinduced in the InGaN well layer can move before recombination. In this report, we estimated the specific length of several MQW structures and the specific length depends on the thickness of well layer more strongly than on that of barrier layer. We also investigate the relationship between the specific length and the MQW structure. The optimum MQW structure for yielding higher short-circuit current can be determined using the specific length and the absorption process in the MQW structure. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
solar cell / InGaN/GaN MQW / short-circuit current / carrier transport / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 114, no. 336, ED2014-94, pp. 103-106, Nov. 2014. |
| Paper # |
ED2014-94 |
| Date of Issue |
2014-11-20 (ED, CPM, LQE) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
ED2014-94 CPM2014-151 LQE2014-122 |
| Conference Information |
| Committee |
LQE ED CPM |
| Conference Date |
2014-11-27 - 2014-11-28 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
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| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
ED |
| Conference Code |
2014-11-LQE-ED-CPM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Investigation on the maximization of short-circuit current in InGaN/GaN MQW solar cells |
| Sub Title (in English) |
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| Keyword(1) |
solar cell |
| Keyword(2) |
InGaN/GaN MQW |
| Keyword(3) |
short-circuit current |
| Keyword(4) |
carrier transport |
| Keyword(5) |
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| 1st Author's Name |
Noriyuki Watanabe |
| 1st Author's Affiliation |
Nippon Telegraph and Telephone Corporation (NTT) |
| 2nd Author's Name |
Manabu Mitsuhara |
| 2nd Author's Affiliation |
Nippon Telegraph and Telephone Corporation (NTT) |
| 3rd Author's Name |
Haruki Yokoyama |
| 3rd Author's Affiliation |
Nippon Telegraph and Telephone Corporation (NTT) |
| 4th Author's Name |
Jianbo Liang |
| 4th Author's Affiliation |
Osaka City University (Osaka City Univ.) |
| 5th Author's Name |
Naoteru Shigekawa |
| 5th Author's Affiliation |
Osaka City University (Osaka City Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2014-11-28 15:10:00 |
| Presentation Time |
25 minutes |
| Registration for |
ED |
| Paper # |
ED2014-94, CPM2014-151, LQE2014-122 |
| Volume (vol) |
vol.114 |
| Number (no) |
no.336(ED), no.337(CPM), no.338(LQE) |
| Page |
pp.103-106 |
| #Pages |
4 |
| Date of Issue |
2014-11-20 (ED, CPM, LQE) |