| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| ED, MW |
2006-01-18
13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology
Takashi Yoshida, Yoshimichi Fukasawa, Tadayoshi Deguchi, Kiyoshi Kawaguchi, Takahiro Sugiyama, Atsushi Nakagawa (New Japan Radio) |
A low-phase-noise76-GHz planar Gunn VCO using flip-chip bonding technology has been developed. The power consumption is ... [more] |
ED2005-192 MW2005-146
pp.1-5 |
| ED, MW |
2006-01-18
13:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Over 40-Gbit/s Digital Circuits Using InP HEMT Technology
Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Kozo Makiyama, Tsuyoshi Takahashi, Naoki Hara, Tatsuya Hirose (Fujitsu Labs.) |
In this paper, we describe ultra high-speed digital ICs operated at 40 Gbit/s. Multiphase architecture we developed make... [more] |
ED2005-193 MW2005-147
pp.7-12 |
| ED, MW |
2006-01-18
14:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs
Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata, Kenji Kurishima, Norihide Kashio, Takatomo Enoki, Hirohiko Sugahara (NTT PH Labo.) |
[more] |
ED2005-194 MW2005-148
pp.13-18 |
| ED, MW |
2006-01-18
14:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
120-GHz Band 10-Gbit/s Millimeter-wave MMIC Waveguide Modules for Wireless Access System
Toshihiko Kosugi (NTT Photonics Lab.), Akihiko Hirata (NTT Microsystem Integration Lab.), Masami Tokumitsu, Hirohiko Sugahara (NTT Photonics Lab.) |
[more] |
ED2005-195 MW2005-149
pp.19-22 |
| ED, MW |
2006-01-18
15:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Increase of colllector current in hot eletron transistors controlled by gate bias
Issei Kashima, Akira Suwa (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech JST-CREST) |
[more] |
ED2005-196 MW2005-150
pp.23-28 |
| ED, MW |
2006-01-18
15:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias
Nobuya Machida, Mitsuhiko Igarashi, Tomohiro Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech.) |
We performed full-band Monte Carlo simulations for the hot-electron transistor with the transit region made of the intri... [more] |
ED2005-197 MW2005-151
pp.29-32 |
| ED, MW |
2006-01-18
16:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Effects of surface recombination on dc characteristics of InGaP/GaAs heterojunction bipolar transistors(HBT’s)
Airi Kurokawa, Zhi Jin, Hiroshi Ono, Kazuo Uchida, Shinji Nozaki, Hiroshi Morisaki (UEC) |
[more] |
ED2005-198 MW2005-152
pp.33-38 |
| ED, MW |
2006-01-19
10:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Slow Current Transients and Current Collapse in GaN FETs
Hiroki Takayanagi, Keiichi Itagaki, Hiroyuki Nakano, Kazushige Horio (Shibaura Inst. Tech.) |
Two-dimensional transient analyses of GaN MESFETs are performed in which a deep donor and a deep acceptor in a semi-insu... [more] |
ED2005-199 MW2005-153
pp.1-6 |
| ED, MW |
2006-01-19
10:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Gate-Lag Phenomena in Unpassivarwd AlGaN/GaN HEMTs
Alberto F. Basile, Junji Kotani, Tamotsu Hashizume (Hokkaido Univ) |
[more] |
ED2005-200 MW2005-154
pp.7-12 |
| ED, MW |
2006-01-19
11:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
C-V characterization of GaN-based MIS structures at high temperatures
Hiroki Kato, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.) |
[more] |
ED2005-201 MW2005-155
pp.13-16 |
| ED, MW |
2006-01-19
11:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Investigation of Bandgap Bowing Parameter of Lattice-Matched Wurtzite InAlGaN Quarternary Alloy
Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric), Takashi Egawa (Nagoya Inst. Tech.) |
[more] |
ED2005-202 MW2005-156
pp.17-21 |
| ED, MW |
2006-01-19
13:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
AlGaN/GaN HFETs with a low-temperature GaN cap layer
Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology) |
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a highly resistive, low-temperature GaN (LT-GaN) cap lay... [more] |
ED2005-203 MW2005-157
pp.23-27 |
| ED, MW |
2006-01-19
13:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
AlGaN/GaN-HEMTs with Recessed Ohmic Electrodes on Si
Juro Mita, Katsuaki Kaifu, Masanori Itoh, Yoshiaki Sano (Oki), Hiroyasu Ishikawa, Takashi Egawa (Nitech) |
[more] |
ED2005-204 MW2005-158
pp.29-34 |
| ED, MW |
2006-01-19
14:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane
Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric) |
GaN-based material is attractive for future power devices with high breakdown voltage and low on-state resistance becaus... [more] |
ED2005-205 MW2005-159
pp.35-39 |
| ED, MW |
2006-01-19
14:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
0.15-mm-dual-gate AlGaN/GaN HEMT mixers
Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT) |
[more] |
ED2005-206 MW2005-160
pp.41-44 |
| ED, MW |
2006-01-19
15:10 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Highly Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Basestation Applications
Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin (Fujitsu Labs.) |
[more] |
ED2005-207 MW2005-161
pp.45-49 |
| ED, MW |
2006-01-19
15:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
High Power AlGaN/GaN MIS-HEMT
Masahito Kanamura, Toshihide Kikkawa, Taisuke Iwai, Kenji Imanishi, Tokuro Kubo, Kazukiyo Joshin (Fujitsu Labs. Ltd.) |
[more] |
ED2005-208 MW2005-162
pp.51-55 |
| ED, MW |
2006-01-20
09:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
-
-- - --
Koji Wada, Shin Matsumoto, Takashi Iwasaki (UEC) |
[more] |
ED2005-209 MW2005-163
pp.1-5 |
| ED, MW |
2006-01-20
09:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
-
-- - --
Kosei Tanii (UEC), Futoshi Nishimura, Kouji Sasabe, Yoshiaki Ueno (Matsushita Electric Works), Koji Wada, Takashi Iwasaki (UEC) |
[more] |
ED2005-210 MW2005-164
pp.7-12 |
| ED, MW |
2006-01-20
09:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A Novel Bandpass Filter with Sharp Attenuations and Wide Stopbands Developed Through the Combined Use of Composite Resonators and Stepped Impedance Resonators
Hitoshi Miki, Zhewang Ma, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.), Gen Hagiwara (Link Circuit Inc.) |
In this paper, a novel four-pole microstrip bandpass filter (BPF) with sharp attenuations and wide stopband is developed... [more] |
ED2005-211 MW2005-165
pp.13-18 |