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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2012-02-08
13:50		 Hokkaido   Characterization and Analysis of Low-Frequency Noise in SiN Insulator-Gate GaAs Etched Nanowire FETs
Toru Muramatsu, Seiya Kasai, Zenji Yatabe (Hokkaido Univ.) ED2011-157 SDM2011-174		 Low-frequency noise in SiN-gate GaAs-based nanowire field-effect transistors (FETs) is characterized and analyzed focusi... [more] ED2011-157 SDM2011-174
pp.89-93
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