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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, LQE, CPM |
2009-11-20 15:00 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate Shinichi Hoshi, Masanori Itoh, Toshiharu Marui, Hideyuki Okita, Yoshiaki Morino, Isao Tamai, Fumihiko Toda, Shohei Seki (Oki Electric Industry Co., Ltd.), Takashi Egawa (Nagoya Inst. of Tech.) ED2009-157 CPM2009-131 LQE2009-136 |
We have fabricated high RF power output devices using GaN-HEMT on Si substrate, that can be screened out by Hg probe C-V... [more] |
ED2009-157 CPM2009-131 LQE2009-136 pp.139-144 |
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