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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED, CPM 2013-05-16
13:30
Shizuoka Shizuoka Univ. (Hamamatsu) Graduate School of Sci. and Technol. Evaluation of carrier lifetime for 4H-SiC surfaces treated by various processes
Yuto Mori, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2013-16 CPM2013-1 SDM2013-23
For very high voltage SiC bipolar devices, the carrier lifetime is an important parameter which influences the device pe... [more] ED2013-16 CPM2013-1 SDM2013-23
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