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Committee
Date Time
Place
Paper Title / Authors
Abstract
Paper #
MW
,
ED
2007-01-19
15:50
Tokyo
Kikai-Shinko-Kaikan Bldg.
High Voltage and High Frequency( over10MHz) Class-E Power-Supplies Using a GaN-HEMT
Wataru Saito
(
Toshiba Semiconductor
),
Tomokazu Domon
,
Kunio Tsuda
(
Toshiba R & D Center
),
Ichiro Omura
(
Toshiba Semiconductor
)
GaN-HEMTs can realize high-voltage and ultra-low on-resistance due to high critical electric field and high electron mob...
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ED2006-237
MW2006-190
pp.205-208
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