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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2009-11-19
09:25		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates
Hitoshi Sasaki, Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) ED2009-129 CPM2009-103 LQE2009-108		 {11-22} semi-polar plane GaN crystal layers are grown on sapphire substrates using HVPE technique. MOCVD-grown GaN / HT-... [more] ED2009-129 CPM2009-103 LQE2009-108
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