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Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2011-01-14
13:00		 Tokyo Kikai-Shinko-Kaikan Bldg. Process dependence of MOS gate dielectric films on 3C-SiC-OI
Keisuke Yokoyama, Hiroyuki Nakamura, Motoi Nakao, Katsunori Onishi (KIT) ED2010-187 MW2010-147		 We investigated various SiO2 gate insulators on 3C-SiC-OI wafers. While SiC is considered one of the most promising sub... [more] ED2010-187 MW2010-147
pp.65-68
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