|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2012-07-26 13:30 |
Fukui |
Fukui University |
Effects of annealing on DC performance of AlGaN/GaN MIS HEMTs Maiko Hatano, Yuya Taniguchi, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. Fukui) ED2012-41 |
[more] |
ED2012-41 pp.1-4 |
ED, MW |
2012-01-12 13:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
High temperature device characteristics of AlGaN-Channel HEMTs Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.) ED2011-135 MW2011-158 |
We fabricated AlGaN-channel HEMT on a free-standing AlN substrate and estimated their electron transport properties at t... [more] |
ED2011-135 MW2011-158 pp.91-95 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|