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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, ITE-IDY, IEE-EDD |
2012-01-27 14:38 |
Akita |
Akita University |
Measurement of two-wavelength excited photoluminescence in Ba3Si6O12N2:Eu2+ phodphor Ryo Ishioka, Kouhei Igarashi, Takeshi Fukuda (Saitama Univ.), Yasuo Shimomura (STRC, Mitsubishi Chemical), Norihiko Kamata (Saitama Univ.) EID2011-19 |
One candidate of efficient and reliable phosphor materials, Ba3Si6O12N2:Eu2+, is suitable for the combination with UV- t... [more] |
EID2011-19 pp.21-24 |
EID, ITE-IDY, IEE-EDD, IEIJ-SSL |
2011-01-28 13:45 |
Kochi |
Kochi University of Technology |
Characterization of Ba3Si6O12N2:Eu2+ Phosphor by Photo- and Thermoluminescence Ryo Ishioka, Kouhei Igarashi, Takeshi Fukuda (Saitama Univ.), Naoto Kijima (Mitsubishi Chemical), Norihiko Kamata (Saitama Univ.) EID2010-28 |
Optical characterization of Ba3Si6O12N2:Eu2+ (BSON) phosphor was carried out based on an internal quantum efficiency, ph... [more] |
EID2010-28 pp.25-28 |
EID, ITE-IDY, IEE-EDD, IEIJ-SSL |
2011-01-28 14:35 |
Kochi |
Kochi University of Technology |
Photoluminescence Characterization of AlGaN-Based Crystals for Deep Ultraviolet Region Kouhei Igarashi, Ryo Ishioka, Yusuke Tsukada, Takeshi Fukuda, Zentaro Honda (Saitama Univ.), Hideki Hirayama (RIKEN), Norihiko Kamata (Saitama Univ.) EID2010-31 |
In order to improve the quality of AlGaN-based crystals for deep-UV light emission, we studied photoluminescence (PL) of... [more] |
EID2010-31 pp.41-44 |
ITE-IDY, EID, IEIJ-SSL, IEE-EDD |
2010-01-28 14:20 |
Fukuoka |
Kyusyu Univ. (Chikushi Campus) |
Characterization of Nonradiative Recombination Centers in InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Tomohiko Yamaguchi, Kouhei Igarashi, Takeshi Fukuda, Zentaro Honda, Norihiko Kamata (Saitama Univ.) |
We investigated below-gap levels in MOCVD-grown Si-doped In0.16Ga0.84N/In0.02Ga0.98N Quantum well (QW) structures by an ... [more] |
EID2009-55 pp.33-36 |
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