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Date Time
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Abstract
Paper #
SDM
2006-06-22
09:50
Hiroshima
Faculty Club, Hiroshima Univ.
The dependence of the intermediate nitridation states density at Si3N4/Si interface on surface Si atoms density
Masaaki Higuchi
(
Tohoku Univ.
),
Seiji Shinagawa
(
Musashi Inst. of Tech.
),
Akinobu Teramoto
(
Tohoku Univ.
),
Hiroshi Nohira
(
Musashi Inst. of Tech.
),
Takeo Hattori
(
Tohoku Univ./Musashi Inst. of Tech.
),
Eiji Ikenaga
(
JASRI
),
Shigetoshi Sugawa
,
Tadahiro Ohmi
(
Tohoku Univ.
)
[more]
SDM2006-54
pp.71-76
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