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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, VLD 2006-09-26
16:15
Tokyo Kikai-Shinko-Kaikan Bldg. To be announced
Masami Hane, Takeo Ikezawa, Michihito Kawada (NEC), Tatsuya Ezaki (Hiroshima Univ.), Toyoji Yamamoto (MIRAI-ASET)
Simulation analysis of channel-orientation effects on strained silicon MOSFETs based on a full-band Monte Carlo method c... [more] VLD2006-50 SDM2006-171
pp.65-69
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