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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2008-12-05
11:30		 Kyoto Kyoto University, Katsura Campus, A1-001 Si atom movement in a-Si film by soft X-ray excitation using undulator source
Yasuyuki Takanashi, Akira Heya, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo) SDM2008-187		 We investigated the characteristics of a-Si film with thicknesses of 1 and 50 nm those were irradiated by soft X-ray fro... [more] SDM2008-187
pp.17-20
SDM 2007-12-14
10:40		 Nara Nara Institute Science and Technology Influence of laser-plasma x-ray irradiation on crystallization of a-Si film by excimer laser annealing
Yasuyuki Takanashi, Naoto Matsuo, Kazuya Uejukkoku, Akira Heya (Dept.Mat.Sci.&Chem.,Univ.Hyogo), Sho Amano, Shuji Miyamoto, Takayasu Mochizuki (LASTI,Univ.Hyogo) SDM2007-224		 We investigated the crystallization by Laser Plasma Soft-X-ray (LPX) irradiation followed by Excimer Laser Annealing (EL... [more] SDM2007-224
pp.9-13
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