|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, MWPTHz |
2023-12-22 14:20 |
Miyagi |
RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT) ED2023-63 MWPTHz2023-73 |
MOCVD-grown N-polar GaN HEMTs with high-resistivity carbon-doped GaN buffer were fabricated. Carbon auto doping in buffe... [more] |
ED2023-63 MWPTHz2023-73 pp.46-51 |
EE |
2016-11-29 10:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Digital PID Control Using High Order Predictive Control Takayuki Yoshiyama, Terukazu Sato, Kimihiro Nishijima (Oita Univ.) EE2016-43 |
In this paper, it is described Digital PID Control by using High Order Predictive Control. That uses PID Control by usin... [more] |
EE2016-43 pp.75-79 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|