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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-06-21
15:55		 Aichi VBL, Nagoya Univ. Doping and behaviors of impurity atoms in silicon nanowires -- Segregation behaviors of dopant atoms during thermal oxidation --
Naoki Fukata (NIMS), Ryo Takiguchi, Shinya Ishida, Shigeki Yokono (Univ. of Tsukuba), Takashi Sekiguchi (NIMS), Kouichi Murakami (Univ. of Tsukuba) SDM2012-58		 In order to realize the next-generation MOSFETs, it is indispensable to realize the size, site, and structure controls i... [more] SDM2012-58
pp.81-85
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