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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2012-06-21
12:15
Aichi VBL, Nagoya Univ. Evaluation of Al atoms as a function of annealing temperature for (TaC)1-xAlx/HfO2 gate stack
Masayuki Kimura (Shibaura Inst. of Tech.), Toshihide Nabatame (NIMS), Hiroyuki Yamada (Shibaura Inst. of Tech.), Akihiko Ohi, Toshihiro Narushima, Toyohiro Chikyow (NIMS), Tomoji Ohishi (Shibaura Inst. of Tech.)
Al-incorporated TaC ((TaC)1-xAlx) (x=0-0.33)) thin films were used as gate electrode to control Vfb for HfO2 MOS capacit... [more]
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