Print edition: ISSN 0913-5685
Online edition: ISSN 2432-6380
[TOP] | [2006] | [2007] | [2008] | [2009] | [2010] | [2011] | [2012] | [Japanese] / [English]
CPM2005-126
Simulation of Phase Separation in InAlBN
Takeshi Kimura, Takashi Matsuoka (Tohoku Univ.)
pp. 1 - 4
CPM2005-127
Characteristics of Group III Nitrides Grown by PLD
Hiroshi Fujioka, Jitsuo Ohta, Shigeru Inoue, Atsushi Kobayashi, Koichirou Okamoto (The University of Tokyo), TaeWon Kim, Nobuyuki Matsuki (KAST)
pp. 5 - 8
CPM2005-128
Low temperature deposition of AlN films by compound source MBE technique
Toshiaki Kobayashi, Kouji Hirayama, Shinichi Egawa, Miwako Akiyama, Koichi Sugimoto, Taichi Baba, Tohru Honda, Hideo Kawanishi (Kogakuin Univ.)
pp. 9 - 12
CPM2005-129
Fabrication processes of UV electroluminescent devices based on GaN crystallites
Taichi Baba, Miwako Akiyama, Shinichi Egawa, Toshiaki Kobayashi, Noriyuki Hasunuma, Tohru Honda, Hideo Kawanishi (Kogakuin Univ.)
pp. 13 - 16
CPM2005-130
Growth and characterization in AlGaN using polished AlN epilayer
Norihiro Masuda, Akira Ishiga, Yuhuai Liu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tomohiko Shibata, Mitsuhiro Tanaka (NGK), Masaya Haraguchi, Noriyuki Kuwano (Kyuusyuu Univ.)
pp. 17 - 22
CPM2005-131
n-type conductivity control and characterization of Si doped AlGaN with high Al mole fraction
Takuya Katsuno, Takashi Onishi, Yuhuai Liu, (Mie Univ.), Tomohiko Shibata, Mitsuhiro Tanaka (NGK), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
pp. 23 - 28
CPM2005-132
Growth of AlN crystal on various SiC substrates by sublimation method
Noritaka Tsuchiya, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Kenji Shimono, Tadashi Noro, Takashi Takagi (Ibiden Co. Ltd), Tomoaki Furusho (SiXON Ldt.)
pp. 29 - 34
CPM2005-133
Development of high quality SiC substrates
Tomoaki Furusho, Ryohei Kobayashi, Makoto Sasaki, Toshihiko Hayashi, Hiroyuki Kinoshita, Hiromu Shiomi (SiXON)
pp. 35 - 38
CPM2005-134
Liquid sensor using gateless AlGaN/GaN HEMT structure
Takuya Kokawa, Takeshi Kimura, Taketomo Sato, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.)
pp. 39 - 42
CPM2005-135
Hydrogen Gas Sensors of Pd Schottky Diodes Formed on AlGaN/GaN Heterostructure
Kazushi Matsuo, Takeshi Kimura, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.)
pp. 43 - 46
CPM2005-136
Hydrogen generation by photoelectrolysis using nitride semiconductors
Katsushi Fujii (JST), Masato Ono, Takashi Ito, Yasuhiro Iwaki (TUS), Kazuhiro Ohkawa (TUS/JST)
pp. 47 - 52
CPM2005-137
High Power operation of GaN-based laser diode with high slope efficiency
Kyosuke Kuramoto, Akihito Ohno (Mitsubishi Elec. Corp.), Tomoo Yamada, Hiroaki Okagawa (Mitsubishi Cable Industries, Ltd.), Zempei Kawazu, Kazushige Kawasaki, Nobuyuki Tomita, Katsuomi Shiozawa, Kyozo Kanamoto, Hiroshi Watanabe, Masayoshi Takemi, Tetsuya Yagi (Mitsubishi Elec. Corp.), Hiroaki Murata (Mitsubishi Cable Industries, Ltd.), Akihiro Shima (Mitsubishi Elec. Corp.)
pp. 53 - 56
CPM2005-138
High-Power Blue-Violet Laser Diodes for Optical Disc Systems
Takashi Kano, Yasuhiko Nomura, Masayuki Hata, Daijiro Inoue, Masayuki Shono (Sanyo Electric)
pp. 57 - 60
CPM2005-139
Growth and charctrization of InGaN nanocolumn LED by RF-MBE
Akihiko Kikuchi, Makoto Tada, Katsumi Kishino (Sophia Univ.)
pp. 61 - 65
CPM2005-140
Obserbation of high internal quantum efficiency from 330nm-band InAlGaN quantum wells
Hideki Hirayama, Takayoshi Takano, Tomoaki Ohashi, Sachie Fujikawa (RIKEN), Norihiko Kamata (Saitama Univ.), Yukihiro Kondo (RIKEN)
pp. 67 - 72
CPM2005-141
Correlation between threading dislocations and recombination dynamics in InGaN quantum wells
Akio Kaneta, Mitsuru Funato (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.), Yoichi Kawakami (Kyoto Univ.)
pp. 73 - 76
CPM2005-142
Multicolor emission from InGaN/GaN three-dimensional quantum structures
Mitsuru Funato, Teruhisa Kotani, Tsuyoshi Kondou, Koji Nishizuka (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia), Yoichi Kawakami (Kyoto Univ.)
pp. 77 - 80
CPM2005-143
PL characterization of In surface segregation in InGaN/GaN Multiple Quantum Well Structures using MOCVD reactor (2” ×6 wafers)
Kazutada Ikenaga, Akinori Ubukata, Akira Yamaguchi, Nakao Akutsu, Kinji Fujii, Koh Matsumoto (TAIYO NIPPON SANSO)
pp. 81 - 84