Print edition: ISSN 0913-5685
Online edition: ISSN 2432-6380
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LQE2005-45
High-quality InN grown on micro-facetted InN template
Daisuke Muto, Hiroyuki Naoi, Tsutomu Araki, Sachio Kitagawa, Masahito Kurouchi, Hyunseok Na, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 1 - 4
LQE2005-46
NH3/TMI molar ratio dependence of electrical and optical properties for atmospheric-pressure MOVPE InN
Hiroshi Miwa, Yasuhiko Nagai, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
pp. 5 - 8
LQE2005-47
(11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE
-- Investigation of Non-polar InN --
Yuya Kumagai, Akihiro Tsuyuguchi, Kuniko Teraki, Tsutomu Araki, Hiroyuki Naoi, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 9 - 12
LQE2005-48
Polarity determination of InN by atomic hydrogen irradiation
Yuya Hayakawa, Daisuke Muto (Ritsumeikan Univ.), Hiroyuki Naoi (COE program), Akira Suzuki (Research Organization of Science and Engineering), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 13 - 16
LQE2005-49
Growth and characterization of InN/InGaN multiple quantum wells by RF-MBE
Tatsuo Ohashi, Shunsuke Ishizawa, Petter Holmström, Akihiko Kikuchi, Katsumi Kishino (Sophia Univ.)
pp. 17 - 21
LQE2005-50
Characterization of InN/InGaN quantum well structures grown by RF-MBE
Masahito Kurouchi, Sinya Takado, Hiroyuki Naoi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 23 - 28
LQE2005-51
The Growth of AlInN Ternary Alloys and Fabrication of InN/AlInN MQWs
Wataru Terashima, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.)
pp. 29 - 34
LQE2005-52
Mg doping of MOVPE InN using CP2Mg
Yasuhiko Nagai, Hiroshi Miwa, , Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
pp. 35 - 38
LQE2005-53
C-band AlGaN/GaN HEMTs with 170W Output Power
Yoshiharu Takada, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (Toshiba)
pp. 39 - 42
LQE2005-54
Effect of epitaxial layer crystal quality on DC and RF characteristics of AlGaN/GaN short-gate HEMTs
Kenji Shiojima, Takashi Makimura, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT)
pp. 43 - 46
LQE2005-55
Pnp AlGaN/GaN HBTs operated under high-temperature and high-power
Kazuhide Kumakura, Toshiki Makimoto (NTT Basic Research Labs.)
pp. 47 - 50
LQE2005-56
Normally-off AlGaN/GaN HEMT with Recessed Gate for High Power Applications
Ken Nakata, Takeshi Kawasaki, Seiji Yaegashi (Eudyna Device Inc.)
pp. 51 - 56
LQE2005-57
AlGaN/GaN heterojunction field-effect transistors with InAlGaN quaternary alloy capping layers lattice matched to GaN
Satoshi Nakazawa, Tetsuzo Ueda, Kaoru Inoue, Tsuyoshi Tanaka (Matsushita Electric), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.)
pp. 57 - 61
LQE2005-58
Characteristics of AlGaN/GaN HEMT on (111) Silicon Substrates
Yoshiaki Katayama, Hiroyasu Ishikawa, Takashi Egawa (Nagoya Inst. Tech.)
pp. 63 - 66
LQE2005-59
Lateral tunneling transport in submicron gates on AlGaN/GaN HFET
Junji Kotani, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.)
pp. 67 - 70
LQE2005-60
Study on correlation between the leakage current of GaN-layer and the luminescence intensity
Akihiro Hinoki (Ritsumeikan Univ.), , Tadayoshi Tsuchiya, Tomoyuki Yamada, Masayuki Iwami (FED), Junjiroh Kikawa, Tsutomu Araki, Akira Suzuki, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 71 - 74
LQE2005-61
Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
Tomoyuki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Masayuki Iwami (R&D Association for Future Electron Devices), Tsutomu Araki, Akira Suzuki, Yasushi Nanishi (Ritsumeikan Univ.)
pp. 75 - 78
LQE2005-62
Electrical Properties of Ni/i-AlGaN/GaN Gate Structures and Influence of Termal Annealing
Takayuki Sawada, Satoshi Yoneta, Kensuke Takahashi (Hokkaido Inst. Tech.), Seong-Woo Kim, Toshimasa Suzuki (Nippon Inst. Tech.)
pp. 79 - 84
LQE2005-63
Surface acoustic wave devices fabricated on n+ GaN/undoped GaN layers
Naoteru Shigekawa, Kazumi Nishimura, Haruki Yokoyama (NTT), Kohji Hohkawa (Kanagawa Inst. Technol.)
pp. 85 - 88
LQE2005-64
Formation of AlGaN/GaN nano wire network using selective RF-MBE
Takeshi Oikawa, Taketomo Sato, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.)
pp. 89 - 92
LQE2005-65
Short-gate AlGaN/GaN HFETs with extremely thin AlGaN barriers for millimeter-wave operations
Masataka Higashiwaki, Norio Onojima, Toshiaki Matsui (NICT)
pp. 93 - 96