Print edition: ISSN 0913-5685
Online edition: ISSN 2432-6380
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ED2005-173
[Invited Talk]
Reliability Evaluation in Low Temperature Poly-Si Thin Film Transistors
Yukiharu Uraoka, Takashi Fuyuki (NAIST)
pp. 1 - 6
ED2005-174
[Invited Talk]
Barrier films prepared for organic electroluminescence device
Akira Heya (Univ. of Hyogo), Toshiharu Minami (IRII), Toshikazu Niki, Shigehira Minami (Ishikawa Seisakusyo), Atsushi Masuda, Hironobu Umemoto (JAIST), Naoto Matsuo (Univ. of Hyogo), Hideki Matsumura (JAIST)
pp. 7 - 12
ED2005-175
Development of accurate NBTI lifetime prediction and evaluation methods using hole injection
Akinobu Teramoto, Kazufumi Watanabe, Rihito Kuroda (Tohoku Univ.), Michihiko Mifuji, Takahisa Ymaha (Rohm), Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
pp. 13 - 18
ED2005-176
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Ryouhei Uno, Haruhiko Yoshida, Shinichi Sato (Univ. of Hyogo)
pp. 19 - 24
ED2005-177
Localization Method of Failure Point with Scan Chain
Takeshi Kataoka, Hisakazu Watanabe, Yasushi Kannan, Masaji Tanaka (Matsushita Electric Industrial)
pp. 25 - 30
ED2005-178
Highly reliable InP-based HBTs with a ledge structure operating at current density over 2mA/um2
Yoshino K. Fukai, Kenji Kurishima, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Photonics Labs.)
pp. 31 - 35
ED2005-179
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Yoichi Nogami, Takayuki Hisaka, Naohito Yoshida (Mitsubishi)
pp. 37 - 41
ED2005-180
Electrical characterization of n-GaN exposed to hydrogen plasma
Masayuki Suda, Seiji Nakamura, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.)
pp. 43 - 46
ED2005-181
Investigation of gate leakage current and gate control anomalies in nanometer-scale Schottky gate AlGaN/GaN HFETs
Seiya Kasai, Junji Kotani, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.)
pp. 47 - 52