Print edition: ISSN 0913-5685
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CPM2006-113
Prepration of AZO thin films by sputtering method
Ayumu Kawakami, Toru Noguchi, Akiyuki Higashide, Shinsuke Miyazaki, Hidehiko Shimizu, Takeo Maruyama, Haruo Iwano, Takahiro Kawakami (Niigata Univ.), Yoichi Hoshi (T.P.U.)
pp. 1 - 5
CPM2006-114
Prepration of ITO thin films on plastic substrate.
Masaki Takeuchi, Kazuya Morishita, Takeshi Umetsu, Yusuke Nakata, Shinsuke Miyazaki, Hidehiko Shimizu, Takeo Maruyama, Haruo Iwano, Takahiro Kawakami (Niigata Univ.), Yoichi Hoshi (Tokyo Polytechnics Univ.), Masahiro Minagawa (Nippon Seiki)
pp. 7 - 11
CPM2006-115
Fabrication of Cr2O3 Thin Films by RF Magnetron Sputtering
Takeshi Asada, Kenjirou Nagase, Takayuki Yamada, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon univ)
pp. 13 - 18
CPM2006-116
Growth Control of Carbon Nanotubes on Ni/Mo Bilayer
Hiroki Okuyama, Nobuyuki Iwata, Hiroshi Yamamoto (Nihon Univ.)
pp. 19 - 24
CPM2006-117
Cathodo-Luminescence study of AlInN films grown by RF-MBE
Yu Mimura, Wataru Terashima, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.)
pp. 25 - 30
CPM2006-118
Reactive Sputter Deposition of AlN Film and Its Application to LD Submount
Akihiro Shiono, Masahide Nakakuki, Isao Kobayashi, Tomohiko Yamakami, Rinpei Hayashibe (Shinshu Univ.), Motoki Obata (CITIZEN FINE TECH), Katsuya Abe, Kiichi Kamimura (Shinshu Univ.)
pp. 31 - 35
CPM2006-119
Thermal stability and interface moï½’phology in Cu/ZrN/SiOC/Si system
Atsushi Noya, Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.), Eiji Aoyagi (Tohoku Univ.)
pp. 37 - 40
CPM2006-120
Novel PVD process of extremely-thin TiNx barrier with radical reaction for Cu interconnects
Mayumi B. Takeyama, Tadayoshi Yanagita, Atsushi Noya (Kitami Inst. of Technol.)
pp. 41 - 46
CPM2006-121
Barrier properties of HfNx thin films prepared by hot wire method between Cu interconnects and SiO2 or SiOC layer
Masaru Sato, Mayumi B. Takeyama, Atsushi Noya (Kitami Inst. of Technol.)
pp. 47 - 52
CPM2006-122
Surface roughness control of SiGe layer deposited by Ion Beam Sputtering toward strained Si fabrication
Jun Yamamoto, Yuta Sakaguchi, Kimihiro Naruse, Kimihiro Sasaki (Kanazawa Univ.)
pp. 53 - 57
CPM2006-123
Thermoelectric performance of deteriorated SiGe thin films
-- influence from substrate --
Akinari Matoba, Toshio Hayahira, Takahiro Tsuduki, Kimihiro Sasaki (Kanazawa Univ.), Youich Okamoto, Jun Morimoto (Defense Univ.)
pp. 59 - 63
CPM2006-124
Formation of high density nanodots aiming for Ge embedded SiC
Tetsushi Kanemaru, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. Tech.)
pp. 65 - 70
CPM2006-125
Degradation of MOVPE InN during the growth
Kenichi Sugita, Yoshinori Hochin, Akihiro Hashimoto, Akio Yamamoto (Univ. of Fukui)
pp. 71 - 74
CPM2006-126
Growth delay time on fabricating thin ZrO2 film by limited reaction sputtering
Hidetaka Sugiyama, Nobuo Kojima, Taro Yamagishi, Zhou Ying, Kimihiro Sasaki (Kanazawa Univ.)
pp. 75 - 79
CPM2006-127
The practical sputtering system for oxide films by oxygen ion implantation
Shinobu Chiba, Kimihiro Sasaki (Kanazawa Univ.), Akira Motoki (CBC Co.,Ltd), Tomonobu Hata (JST), Akihiko Ito (SHIBAURA MECHATRONICS Corp.)
pp. 81 - 86
CPM2006-128
Effect of Surface Roughness of Substrate on Structure and Temperature Coefficient of Resistance (TCR) of NiCr Films Deposited by Sputtering
Satoshi Iwatsubo, Takaaki Shimizu (Toyama Ind. Tech. Ctr.)
pp. 87 - 92
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.