IEICE Technical Report

Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380

Electron Device

Workshop Date : 2008-10-23 / Issue Date : 2008-10-16

ED2008-146
Crystalline Recovery and Point Defects Re-arrangement during Activation Annealing of Implanted SiC Crystal
Ryo Hattori, Tomokatsu Watanabe, Hiroaki Sumitani, Tatsuo Oomori (Mitsubishi Electric Corp.), Takeshi Mitani (TRC)
pp. 127 - 132

ED2008-147
Recent Advances on GaN Vertical Power Devices
Tetsu Kachi (Toyota R&D Labs.)
pp. 133 - 138

ED2008-148
High-power AlGaN/GaN HFETs on 4-inch Si substrates
Nariaki Ikeda, Syuusuke Kaya, Jiang Li, Takuya Kokawa, Yoshihiro Sato, Sadahiro Kato (Furukawa Electric)
pp. 139 - 142

ED2008-149
High-Voltage AlGaN/GaN Schottky Barrier Diodes on Si Substrate with Low-Temperature GaN Cap Layer for Edge Termination
Atsushi Kamada (NJRC), Takashi Egawa (NIT)
pp. 143 - 148

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan