IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 118, Number 1

Silicon Device and Materials

Workshop Date : 2018-04-06 - 2018-04-07 / Issue Date : 2018-03-30

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Table of contents

SDM2018-1
In situ observation of immobilization and functionality of dye molecules on solid/liquid interfaces
Naoki Matsuda, Hirotaka Okabe (AIST)
pp. 1 - 5

SDM2018-2
Synchronization of Glycolytic Oscillations in Cancer Cells
Takashi Amemiya, Kenichi Shibata, Junpei Takahashi (YNU)
pp. 7 - 9

SDM2018-3
(See Japanese page.)
pp. 11 - 14

SDM2018-4
[Invited Talk] Low Temperature Poly Si TFTs with Metal Source and Drain
Takashi Noguchi, Tatsuya Okada (Univ. of Ryukyus)
pp. 15 - 18

SDM2018-5
[Invited Talk] High Performance and Functional Group-Ⅳ Thin-Film Transistors
Akito Hara, Hiroki Utsumi, Naoki Nishiguchi, Ryo Miyazaki (Tohoku Gakuin Univ.)
pp. 19 - 24

SDM2018-6
[Invited Talk] properties of IGZO thin-film transistors.
Mamoru Furuta, Aman S G Mehadi, Daichi Koretomo, Yusaku Magari (Kochi Univ. of Tech.)
pp. 25 - 28

SDM2018-7
Thin-film transistor with InGaZnOx-hetero-channel
Ryunosuke Higashi, Daichi Koretomo, Hirosato Tanaka (Kochi Univ. of Tech.), Seiichiro Takahashi, Isamu Yashima (Mitsui Mining & Smelting Co.,LTD), Mamoru Furuta (Kochi Univ. of Tech.)
pp. 29 - 31

SDM2018-8
Origin of Schottky properties in InGaZnOX/AgOX hetero-interface and its application to flexible device.
Yusaku Magari, Hisao Makino, Shinsuke Hashimoto, Kenichiro Hamada, Kentaro Masuda, Mamoru Furuta (Kochi Univ. of Tech.)
pp. 33 - 36

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan