IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 118, Number 291

Silicon Device and Materials

Workshop Date : 2018-11-08 - 2018-11-09 / Issue Date : 2018-11-01

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Table of contents

SDM2018-64
[Invited Talk] SISPAD 2018 Review
Kenichiro Sonoda (Renesas Electronics)
pp. 1 - 6

SDM2018-65
[Invited Talk] Development and Education of Electron Devices assisted with Computer Simulation
Ken Uchida (Univ. of Tokyo), Takahisa Tanaka (Keio Univ.)
pp. 7 - 10

SDM2018-66
[Invited Talk] Proposal and device design of tunneling field effect transistor with oxide semiconductor and group-IV semiconductor
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi (Univ. Tokyo)
pp. 11 - 16

SDM2018-67
[Invited Talk] Device Simulation of Reliability for Advanced Semiconductor Devices
Takamitsu Ishihara, Kazuya Matsuzawa, Takeshi Naito, Sadayuki Yoshitomi (TMC)
pp. 17 - 22

SDM2018-68
[Invited Talk] Development of the evaluation method of the strength of polycrystalline materials based on the order of atom arrangement and its application to the strength evaluation of electroplated copper thin films
Ken Suzuki, Yifan Luo, Hideo Miura (Tohoku Univ.)
pp. 23 - 26

SDM2018-69
[Invited Talk] High Resolution CMOS Ion Image Sensors and Its Application for Biomedical Fields
Kazuaki Sawada, YouNa Lee, Yasuyuki Kimura, Tatsuya Iwata, Kazuhiro Takahashi, Toshiaki Hattori (Toyohashi Tech.)
pp. 27 - 28

SDM2018-70
[Invited Talk] Topography Simulation of Trench-Filling Growth of 4H-SiC
Kazuhiro Mochizuki, Shiyang Ji, Ryoji Kosugi, Yoshiyuki Yonezawa, Hajime Okumura (AIST)
pp. 29 - 34

SDM2018-71
[Invited Talk] Modeling of Electron Transport in 4H-SiC MOS Inversion Layers
Hajime Tanaka, Nobuya Mori (Osaka Univ.)
pp. 35 - 40

SDM2018-72
[Invited Talk] Analysis of Charge Transport in Amorphous Organic Thin Films
Hironori Kaji (Kyoto Univ.)
pp. 41 - 42

SDM2018-73
[Invited Talk] Review of Recent Sensor Devices Research based on Semiconductor Technologies -- With Review of SISPAD 2017 Workshop2: "Technologies for Sensor Devices" --
Shigeyasu Uno (Ritsumeikan Univ.)
pp. 43 - 46

SDM2018-74
[Invited Talk] Device Simulation of Field-Effect Transistor Using Ferroelectric Negative Capacitance
Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Hiroyuki Ota, Shinji Migita, Hidehiro Asai (AIST)
pp. 47 - 52

SDM2018-75
Study of new stacked type logic circuit scheme with fabrication technology of 3D flash memory.
Fumiya Suzuki, Sigeyoshi Watanabe (Shonan Inst. of Tech)
pp. 53 - 57

SDM2018-76
[Invited Talk] Characteristics and Ultralow Voltage Rectification Experiment on MOS Diode connection using Super Steep SS PN-Body Tied SOI-FET
Shun Momose, Jiro Ida, Takuya Yamada, Takayuki Mori, Kenji Itoh (KIT), Koichiro Ishibashi (UEC), Yasuo Arai (KEK)
pp. 59 - 64

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan