Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
[TOP] | [2016] | [2017] | [2018] | [2019] | [2020] | [2021] | [2022] | [Japanese] / [English]
CPM2019-44
Thermal deposition of antimony sulfide thin films
Yasushi Takano, Sho Inoue (Shizuoka Univ.)
pp. 1 - 4
CPM2019-45
Study on Cu orientation control on ultra-thin TaWN film
Mayumi B. Takeyama, Masaru Sato (Kitami Inst. of Technol.)
pp. 5 - 8
CPM2019-46
Annealing effects on the properties of nitrogen doped DLC films
Hiroya Osanai, Kazuki Nakamura, Haruto Koriyama, Yasuyuki Kobayashi, Yoshiharu Enta, Yushi Suzuki (Hirosaki Univ.), Maki Suemitsu (Tohoku Univ.), Hideki Nakazawa (Hirosaki Univ.)
pp. 9 - 14
CPM2019-47
Nitrogen doping to ZnO films in a catalytic reaction assisted chemical vapor deposition
Ryuta Iba, Hiroki Kambayashi, Yuki Adachi (NUT), Koichiro Oishi, Hironori Katagiri (NITNC), Kanji Yasui (NUT)
pp. 15 - 19
CPM2019-48
[Invited Talk]
Metal-oxide film growth by catalytic-reaction assisted chemical vapor deposition
Kanji Yasui (Nagaoka Univ. Technol.)
pp. 21 - 26
CPM2019-49
Characterization of ZrNx films deposited at room temperature by RF sputtering
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Technol.)
pp. 27 - 29
CPM2019-50
Change in Electrical Characteristics with Change of Channel Structure in Integrated FET Using Piezoelectric Film P (VDF-TrFE) as Gate Insulator
Shusaku Matsumoto, Takuya Okayama, Akio Furukawa (Tokyo Univ. of Science)
pp. 31 - 34
CPM2019-51
[Invited Talk]
Mapping of metal/semiconductor and semiconductor/semiconductor interfaces using scanning internal photoemission microscopy
Kenji Shiojima (Univ. of Fukui)
pp. 35 - 38
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.