IEICE Technical Report

Online edition: ISSN 2432-6380

Electron Devices

Workshop Date : 2023-12-21 - 2023-12-22 / Issue Date : 2023-12-14

ED2023-52
[Invited Talk] Expectations and Future Issues of Terahertz Communications
Tadao Nagatsuma (Osaka Univ.)
pp. 1 - 2

ED2023-53
[Invited Talk] LiNbO3 Optical Modulator with Polarization-Reversed Structures for High-Speed Low-Latency Data Transfer over Optical Fiber
Hiroshi Murata (Mie Univ.)
pp. 3 - 6

ED2023-54
Measurement and Simulation of Terahertz Wave Scattering from Dielectric Surfaces
Riku Yoshino, Yoshihide Asakura, Ogaki Arata (Waseda Univ.), Jerdvisanop Chakarothai, Keizo Inagaki (NICT), Tetsuya Kawanishi (Waseda Univ.)
pp. 7 - 10

ED2023-55
[Invited Talk] Virtualized terminal technologies for high-capacity communications toward Beyond 5G
Yoshio Kunisawa, Takahiro Hayashi (KDDI Research)
pp. 11 - 15

ED2023-56
Demonstration of a secure wireless communication system based on XOR operation between two data in terahertz waves
Takuya Yano, Ming Che, Hanwei Chen, Naoya Seiki, Takashi Shiramizu, Yuya Mikami (Kyushu Univ.), Yuta Ueda (NTT), Kazutoshi Kato (Kyushu Univ.)
pp. 16 - 19

ED2023-57
Introduction of a Guided Guided-ModeMode-Resonance Structure in the Uni Uni-TravelingTraveling- Carrier Photodiode for Enhancement of Photoabsorption Efficiency
Ryota Kojima, Taiichi Otsuji, Akira Satou (Tohoku Univ.)
pp. 20 - 24

ED2023-58
Characterization of high-speed wavelength switching of wavelength tunable laser and its applicability to optical switches
Ryo Matsumoto, Naoto Masutomi, Ryota Kaide, Yuya Mikami (Kyushu Univ.), Yuta Ueda (NTT), Kazutoshi Kato (Kyushu Univ.)
pp. 25 - 28

ED2023-59
[Invited Talk] Development of high-peak-power sub-terahertz-wave parametric source toward electron acceleration
Yuma Takida, Hiroaki Minamide (RIKEN)
pp. 29 - 31

ED2023-60
Milliwatt-class high-power terahertz oscillations in RTD oscillator with cavity-type resonator
Hiroki Tanaka, Hidenari Fujikata, Han Feifan, Takumi Shimura, Safumi Suzuki (Titech)
pp. 32 - 35

ED2023-61
[Invited Talk] On-chip readout of ultrafast charge dynamics in graphene using terahertz electronics
Katsumasa Yoshioka (NTT)
pp. 36 - 39

ED2023-62
[Invited Talk] Device Modeling Techniques for Millimeter-wave Band GaN Amplifiers
Yutaro Yamaguchi, Shintaro Shinjo (Mitsubishi Electric), Yasuyuki Miyamoto (Titech)
pp. 40 - 45

ED2023-63
MOCVD growth and device characteristics of N-polar GaN HEMT with high-resistivity C-doped GaN buffer
Yuki Yoshiya, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Fumito Nakajima (NTT)
pp. 46 - 51

ED2023-64
High sensitivity THz Detection based on a Rectenna Graphene FET implemented with 3D Rectification Effect
Hironobu Seki, Sinnosuke Uchigasaki, Koichi Tamura, Chao Tang, Akira Satou, Hirokazu Hukidome (RIEC, Tohoku Univ.), Tetsuya Suemitsu (NICHe), Takashi Uchino (Tohoku Institute of Technology), Yuma Takida, Hiroaki Minamide (RIKEN), Taiichi Otsuji (RIEC, Tohoku Univ.)
pp. 52 - 57

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan