IEICE Technical Report

Online edition: ISSN 2432-6380

Volume 124, Number 242

Silicon Device and Materials

Workshop Date : 2024-11-07 - 2024-11-08 / Issue Date : 2024-10-31

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Table of contents

SDM2024-54
[Invited Talk] Memory Centric Computing for AI Applications
Ken Takeuchi (Tokyo Univ.)
p. 1

SDM2024-55
[Invited Talk] SISPAD2024 Review
Hideki Minari (Sony Semiconductor Solutions)
pp. 2 - 5

SDM2024-56
[Invited Talk] Study on High Thermal Conductivity AlN Films and Its Application for Advanced 3D Chiplets
Takeshi Takagi, Takeki Ninomiya, Masaaki Niwa, Soken Obara, Takeshi Momose, Yuhihiro Shimogaki, Masahiro Nomura, Hiroshi Fujioka (The Univ. of Tokyo), Masakazu Mori (Ryukoku Univ), Tadahiro Kuroda (The Univ. of Tokyo)
pp. 6 - 9

SDM2024-57
[Invited Talk] TCAD Simulation Modeling of Mold Epoxy Resin Applied for Encapsulation of Power Devices
Tomohiro Tamaki, Kohei Ebihara, Kazuya Konishi, Koki Kishimoto, Soneda Shinya, Tetsuo Takahashi, Tetsuya Nitta, Tatsuro Watahiki (Mitsubishi Electric), Keunsam Lee (Nihon Synopsys)
pp. 10 - 15

SDM2024-58
[Invited Talk] Effect of Random Potential on Subthreshold Characteristics in MOSFETs
Nobuya Mori (Osaka Univ.)
pp. 16 - 19

SDM2024-59
[Invited Talk] Understanding the Cryogenic-CMOS Operation by Milli-Kelvin Temperature Characterization
Hiroshi Oka, Hidehiro Asai, Takumi Inaba, Shunsuke Shitakata, Hitoshi Yui, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Takashi Nakayama, Takahiro Mori (AIST)
pp. 20 - 21

SDM2024-60
[Invited Talk] Automation of Cryogenic Device Modeling Utilizing Neural Networks
Takumi Inaba, Yusuke Chiashi, Minoru Ogura, Hidehiro Asai, Hiroshi Fuketa, Hiroshi Oka, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Takahiro Mori (AIST)
pp. 22 - 25

SDM2024-61
[Invited Talk] Compact Modeling of SOI-MOSFET with Trap-Rich Substrate
Takahiro Iizuka (Hiroshima Univ.)
pp. 26 - 29

SDM2024-62
A Simulation Study of Single-Event Transient in CFET SRAM
Sida Wang, Yoshinari Kamakura (OIT)
pp. 30 - 33

SDM2024-63
[Invited Talk] Statistic analysis of threshold voltage variations of MOSFET caused by discrete impurities by machine learning
Shota Seki, Keiichi Osada, Masaki Takaishi, Ryotaro Kasahara (Aixtal), Kentaro Kutsukake, Toru Ujihara (Nagoya Univ.)
pp. 34 - 37

SDM2024-64
[Invited Talk] Universal neural network potential PFP for all stable elements and expansion of applicable fields
So Takamoto (PFN)
pp. 38 - 39

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan