Online edition: ISSN 2432-6380
[TOP] | [2020] | [2021] | [2022] | [2023] | [2024] | [2025] | [2026] | [Japanese] / [English]
SDM2025-25
[Invited Talk]
Development of valence-control-type materials for semiconductor devices
Shogo Hatayama (AIST)
p. 1
SDM2025-26
[Invited Talk]
Atomic Insight for Regulation of Interfacial Thermal Transport Between Si and AlN via Machine Learning Potential
Weitao Wang, Masahiro Nomura (UTokyo)
pp. 2 - 5
SDM2025-27
[Invited Talk]
Research on the elucidation of transport phenomena and the electrical control of spin-orbit interaction in nanostructured semiconductors
Keiko Takase (TUAT)
pp. 6 - 8
SDM2025-28
[Invited Talk]
Silicon Photonics Device Technology with Germanium
Yasuhiko Ishikawa, Keisuke Yamane (Toyohashi Univ. Tech.), Junichi Fujikata (Tokushima Univ.)
pp. 9 - 12
SDM2025-29
[Invited Talk]
Growth of SiGe on Si(110) substrates
Keisuke Arimoto, Yuta Fujimoto, Monami Yokota, Yuki Aonuma (Univ. of Yamanashi), Kosuke O. Hara (NAIST), Junji Yamanaka (Univ. of Yamanashi), Akihiro Suzuki, Naoyuki Wada, Kazuhito Matsukawa, Koji Matsumoto, Hiroaki Yamamoto (SUMCO)
pp. 13 - 15
SDM2025-30
[Invited Talk]
Fabrication of MoS2 nanotubes using anodic aluminum oxide templates and their application in electronic devices
Tomohiro Shimizu, Syoichi Hirono, Takeshi Ito, Shoso Shingubara (Kansai Univ.)
pp. 16 - 18
SDM2025-31
[Invited Talk]
Low-temperature formation of oxide semiconductors using plasma-assisted reactive sputtering
Kosuke Takenaka (Univ. Osaka), Takayuki Ohta (Meijo Univ.), Yuichi Setsuhara (Univ. Osaka)
pp. 19 - 22
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.