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Paper Abstract and Keywords
Presentation 2025-06-27 15:35
[Invited Talk] Growth of SiGe on Si(110) substrates
Keisuke Arimoto, Yuta Fujimoto, Monami Yokota, Yuki Aonuma (Univ. of Yamanashi), Kosuke O. Hara (NAIST), Junji Yamanaka (Univ. of Yamanashi), Akihiro Suzuki, Naoyuki Wada, Kazuhito Matsukawa, Koji Matsumoto, Hiroaki Yamamoto (SUMCO) SDM2025-29
Abstract (in Japanese) (See Japanese page) 
(in English) For semiconductor devices, the orientation of the substrate surface is important for the following reasons. Firstly, it determines the channel plane on which carriers move. Secondly, the orientation of the heterointerface influences lattice strain. Furthermore, it impacts the defect formation and film quality. We will introduce research results on the crystal growth of SiGe on Si(110) substrates and its device applications from these perspectives. Additionally, we will report on the effect of substrate inclination on improving the flatness of SiGe epitaxial thin films, which is a critical issue for the industrial application of Si(110) wafers.
Keyword (in Japanese) (See Japanese page) 
(in English) nanosheet / Si(110) wafer / SiGe / crystal growth / / / /  
Reference Info. IEICE Tech. Rep., vol. 125, no. 91, SDM2025-29, pp. 13-15, June 2025.
Paper # SDM2025-29 
Date of Issue 2025-06-20 (SDM) 
ISSN Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2025-29

Conference Information
Committee SDM  
Conference Date 2025-06-27 - 2025-06-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Univ., E&S Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices, Memories, and Power Devices 
Paper Information
Registration To SDM 
Conference Code 2025-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of SiGe on Si(110) substrates 
Sub Title (in English)  
Keyword(1) nanosheet  
Keyword(2) Si(110) wafer  
Keyword(3) SiGe  
Keyword(4) crystal growth  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Keisuke Arimoto  
1st Author's Affiliation University of Yamanashi (Univ. of Yamanashi)
2nd Author's Name Yuta Fujimoto  
2nd Author's Affiliation University of Yamanashi (Univ. of Yamanashi)
3rd Author's Name Monami Yokota  
3rd Author's Affiliation University of Yamanashi (Univ. of Yamanashi)
4th Author's Name Yuki Aonuma  
4th Author's Affiliation University of Yamanashi (Univ. of Yamanashi)
5th Author's Name Kosuke O. Hara  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
6th Author's Name Junji Yamanaka  
6th Author's Affiliation University of Yamanashi (Univ. of Yamanashi)
7th Author's Name Akihiro Suzuki  
7th Author's Affiliation SUMCO CORPORATION (SUMCO)
8th Author's Name Naoyuki Wada  
8th Author's Affiliation SUMCO CORPORATION (SUMCO)
9th Author's Name Kazuhito Matsukawa  
9th Author's Affiliation SUMCO CORPORATION (SUMCO)
10th Author's Name Koji Matsumoto  
10th Author's Affiliation SUMCO CORPORATION (SUMCO)
11th Author's Name Hiroaki Yamamoto  
11th Author's Affiliation SUMCO CORPORATION (SUMCO)
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Speaker Author-1 
Date Time 2025-06-27 15:35:00 
Presentation Time 35 minutes 
Registration for SDM 
Paper # SDM2025-29 
Volume (vol) vol.125 
Number (no) no.91 
Page pp.13-15 
#Pages 3 
Date of Issue 2025-06-20 (SDM) 

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